Processes
The M/A-COM business has over 20 years of GaAs MMIC production experience.
We provide a full complement of foundry services to meet the requirements
for a custom-designed MMIC, MMIC-based die, or packaged product.
Foundry Processes
M/A-COM SI1 Process
A 1.0 micron process that uses ion implant MESFET technology to build
high volume control devices such as switches, attenuators and phase shifters.
M/A-COM HI2 Process
A 0.5 micron process that utilizes ion implanted MESFET technology
to achieve a high-performing, low-cost process for low noise and medium
power applications through 20 GHz.
M/A-COM PE3 Process
A 0.5 micron process that utilizes molecular beam epitaxy (MBE) to
implement a MESFET active layer structure that achieves high efficiency
and breakdown voltage for multi-watt power applications through 18 GHz.
M/A-COM HP Power Process
A 0.5 micron process that utilizes a PHEMT epitaxial structure which
incorporates patented InGaP etch-stop technology. The unique electron transport
characteristics of this power process enable realization of power transistors
which are ideal for high power, high gain and high efficiency amplifiers.
M/A-COM HS Switch Process
A 0.5 micron process that utilizes a PHEMT epitaxial structure which
incorporates patented InGaP etch-stop technology. The unique electron transport
characteristics of this switch process enable realization of control products
with high linearity, low insertion loss and high isolation.
M/A-COM MSAG™ Process
5
Based on a self-aligned gate implant device structure incorporating
patented refractory gate technology, this process offers a family of MESFETs,
each separately optimized for low noise, high efficiency power, switching,
or logic applications. Combined with a full suite of passive elements and
through-wafer via holes, this process is ideally suited for both complex
multi-function MMICs and high performance single function MMICs.
M/A-COM MSAG™ Process
7
Based on a self-aligned implant device structure which incorporates
patented refractory gate technology and polyimide layer for die protection,
this process enables low cost solutions for many handset receiver applications.
M/A-COM Process LH5
A 0.18 micron process that utilizes a PHEMT epitaxial structure which
incorporates patented InGaP etch-stop technology. This process is optimized
for millimeter wave low noise amplifiers for commercial and military applications.
M/A-COM Process PH5
A 0.18 micron process that utilizes a PHEMT epitaxial structure which
incorporates patented InGaP etch-stop technology. This process is optimized
for millimeter wave power amplifiers for commercial and military applications.
Check out our standard microwave
and millimeter wave MMIC die and packaged devices.
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