Processes
M/A-COM has more than 20 years of GaAs MMIC production experience.
We provide a full complement of foundry services to meet the requirements
for a custom-designed MMIC, MMIC-based die, or packaged product.
Foundry Processes
M/A-COM SI1 Process
A 1.0 micron process that uses ion implant MESFET technology to build
high volume control devices such as switches, attenuators and phase shifters.
M/A-COM HI2 Process
A 0.5 micron process that utilizes ion implanted MESFET technology
to achieve a high-performing, low-cost process for low noise and medium
power applications through 20 GHz.
M/A-COM PE3 Process
A 0.5 micron process that utilizes molecular beam epitaxy (MBE) to
implement a MESFET active layer structure that achieves high efficiency
and breakdown voltage for multi-watt power applications through 18 GHz.
M/A-COM HP Power Process
A 0.5 micron process that utilizes a PHEMT epitaxial structure which
incorporates patented InGaP etch-stop technology. The unique electron transport
characteristics of this power process enable realization of power transistors
which are ideal for high power, high gain and high efficiency amplifiers.
M/A-COM HS Switch Process
A 0.5 micron process that utilizes a PHEMT epitaxial structure which
incorporates patented InGaP etch-stop technology. The unique electron transport
characteristics of this switch process enable realization of control products
with high linearity, low insertion loss and high isolation.
M/A-COM MSAG™ Process
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Based on a self-aligned gate implant device structure incorporating
patented refractory gate technology, this process offers a family of MESFETs,
each separately optimized for low noise, high efficiency power, switching,
or logic applications. Combined with a full suite of passive elements and
through-wafer via holes, this process is ideally suited for both complex
multi-function MMICs and high performance single function MMICs.
M/A-COM MSAG™ Process
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Based on a self-aligned implant device structure which incorporates
patented refractory gate technology and polyimide layer for die protection,
this process enables low cost solutions for many handset receiver applications.
Check out our standard microwave
and millimeter wave MMIC die and packaged devices.
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