Reliability
Overview | Processes | Manufacturing | Quality |
Reliability | Facilities
Summary of reliability results on
M/A-COM processes (April 2001)
Process |
MTTF
at Tch= |
Activation
Energy |
Tch
during life tests |
| 150°C |
125°C |
85°C |
| SI1 -
switch |
1 X 107 hrs.
|
1 X 108 hrs.
|
7 X 109 hrs.
|
1.3 eV |
200, 225, 250°C |
| HI2 -
amp |
3 X 105 hrs.
|
2 X 106 hrs.
|
7 X 107 hrs.
|
1.1 eV |
200, 250°C |
| PE3 -
amp |
6 X 105 hrs.
|
3 X 106 hrs.
|
8 X 107 hrs.
|
1 eV
(assumed) |
225°C |
| HS -
switch |
9 X 106 hrs.
|
8 X 107 hrs.
|
6 X 109 hrs.
|
1.3 eV
(assumed) |
250°C |
HP -
power
(preliminary) |
1 X 106 hrs.
|
6 X 106 hrs.
|
2 X 108 hrs.
|
1 eV |
215, 240°C |
|
3 X 105 hrs.
|
1 X 106 hrs.
|
4 X 106 hrs.
|
0.9 eV
(n=1.4) |
225, 250, 280°C |
|
SI1: 0.5µm gate length, recessed, stepper lithography, ion
implanted MESFET process
HI2: 0.5µm gate length, recessed, stepper lithography, ion
implanted MESFET process, buried p layer
PE3: 0.5µm gate length, recessed, e-beam T-gate, epitaxial
MESFET process
HS/HP: 0.5µm gate length, recessed, stepper lithography,
AlGaAs/InGaAs pHEMT process, 3V, 160mA/mm
Switch results based on reversed biased life tests (no drain
current)
Amplifier results based on operating biased tests (with drain
current)
|
The products in this section represent many, but not necessarily all of
the M/A-COM solutions available. For more information or for immediate assistance,
please contact your local M/A-COM sales
office. Our highly trained sales engineers can work with you to meet
your unique system requirements.
The links are to data sheets in Adobe Acrobat format (PDF). Click here to
download a free reader.
|
