Switches - SP5T

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At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications. 

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Part Number Ordering Short Description Min Frequency (MHz) Max Frequency (MHz) Insertion Loss (dB) Isolation (dB) IIP3 (dBm) IP1dB (dBm) 75 Ohm ADS & SPICE Model Info Application Notes Benefits Brightcove Video Compatible Parts Configuration Content Data Sheet Package Outline Datasheet Device Firmware Driver ESD EVM GUI Software EVM User Guides Features Lead Finish Lead-Free MSL Marking Model Data (Sparameters) Outline Drawings Package Package Category Product Briefs Product Bulletins Product Image Qualification Reports ROHS
 
 
 
 
 
 
MA4AGSW5 Buy AlGaAs Reflective
50 50000 1.1 47 40 No
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
3203639713001
SP5T
MA4AGSW5_rev5.pdf
Without
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Polymer Scratch protection
Silicon Nitride Passivation
MACOM's Unique AlGaAs Hetero-Junction Anode Technology
+10mA for Isolation state
-10mA for low loss state
Low Current Consumption.
35 dB Isolation at 50 GHz
1.7dB Insertion Loss at 50 GHZ
Functional Bandwidth : 50 MHz to 70 GHz
RoHS* Compatible
260°C Reflow Compatible
Yes
MA4AGSW5_SPAR.ZIP
DIE
Die
MACOM_general.png
MA4SW510 Buy HMIC™ PIN Diode
50 26500 0.9 38 40 No
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP5T
MA4SW510.pdf
Without
Broad Bandwidth
50 nS Switching Speed
Rugged Fully Monolithic
Lower Insertion Loss and Higher Isolation than Comparable pHEMT/ Discrete Component Designs
Usable from 50 MHz to 26.5 GHz
Specified from 50 MHz to 20 GHz
Up to +30dBm C.W. Power Handling @ +25°C
Glass Encapsulated Chip with Polymer Protective Coating
Yes
MA4SW510_SPAR.zip
DIE
Die/Bumped Die
MACOM_general.png
MA4SW510B-1 Buy Reflective PIN Diode
2000 18000 1.1 41 40 No
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP5T
MA4SW510B-1.pdf
Without
Broad Bandwidth Specified up to 18 GHz
Fully Monolithic
Rugged, Glass Encapsulated Construction
Integrated Bias Network
Usable up to 26 GHz
Low Insertion Loss / High Isolation
Yes
MA4SW510B-1_SPAR.zip
DIE
Die/Bumped Die
MACOM_general.png
MASW-010351 Inquire SP5T High Isolation Terminated Switch
10 4000 1.4 57 50 No
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP5T
MASW-010351.pdf
Without
Isolation: 51 dB @ 2.1 GHz
RoHS* Compliant
260°C Reflow Compatible
Lead-Free 4 mm 24-Lead PQFN package
50 O Terminated Outputs (Off-State)
6 States: 5 ON paths and All-Off State
Low Gate Lag for timing sensitive applications
Integral CMOS 3:5 Decoder, Only 3 Control Pins
Input IP3: 50 dBm Typical @ 2.1 GHz
nsertion Loss: 1.0 dB @ 2.1 GHz
100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
Yes
S044
4mm PQFN-24LD
Plastic Surface Mount
4x4_24-lead PQFN.jpg
MASW-005100-1194 Inquire HMIC SP5T Silicon PIN Diode Switch
50 26500 0.7 50 No
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP5T
MASW-005100-1194.pdf
Without
Ultra Broad Bandwidth: 50MHz to 26GHz
+33dBm Power Handling
Reliable, Fully Monolithic, Glass Encapsulated Construction
50nS Switching Speed
0.9 Insertion Loss: 38dB Isolation at 20GHz
RoHS Compliant
Yes
DIE
Die/Bumped Die
MACOM_general.png