Switches - SP8T

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At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications. 

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Part Number Ordering Short Description Min Frequency (MHz) Max Frequency (MHz) Insertion Loss (dB) Isolation (dB) IIP3 (dBm) IP1dB (dBm) 75 Ohm ADS & SPICE Model Info Application Notes Benefits Brightcove Video Compatible Parts Configuration Content Data Sheet Package Outline Datasheet Device Firmware Driver ESD EVM GUI Software EVM User Guides Features Lead Finish Lead-Free MSL Marking Model Data (Sparameters) Outline Drawings Package Package Category Product Briefs Product Bulletins Product Image Qualification Reports ROHS
 
 
 
 
 
 
MA4AGSW8-1 Buy AlGaAs PIN Diode
50 50000 1.5 37 40 No
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3203639713001
SP8T
MA4AGSW8-1.pdf
Without
Ultra Broad Bandwidth: 50 MHz to 40 GHz
Polymer Scratch protection
Silicon Nitride Passivation
MACOM’s unique AlGaAs hetero-junction anode technology
Low Current consumption: •-10mA for low loss state •+10mA for Isolation state
Functional Bandwidth : 50 MHz to 50 GHz
Yes
AGPS8TA
MA4AGSW8_s2p.zip
DIE
Die
MACOM_general.png
Yes