The MA4BN1840-2 is a fully monolithic broadband bias
network utilizing MACOM's HMICTM (Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310.
This process allows the formation of silicon vias by
imbedding them in low loss, low dispersion glass along
with high Q spiral inductors and MIM capacitors. The
close proximity between elements and the combination
of silicon and glass gives this HMIC device low loss and
high performance with exceptional repeatability through
Large bond pads facilitate the use of low inductance
ribbon bonds, while the gold backside metallization
provides the RF and DC ground. This allows for manual
or automatic die attach via electrically conductive silver
epoxy or RoHS compliant solders.
The MA4BN1840-2 bias network is suitable for the
D.C. biasing of PIN diode control circuits. It functions
as an RF-DC de-coupling network as well as the D.C.
return. The device can also be used as a bi-directional
re-active coupler for Schottky detector circuits. D.C.
currents up to 150 mA and D.C. voltages up to 50 V
may be used.