Product Detail

Monolithic HMIC Integrated Bias Network 18 - 40 GHz
The MA4BN1840-2 is a fully monolithic broadband bias network utilizing MACOM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral inductors and MIM capacitors. The close proximity between elements and the combination of silicon and glass gives this HMIC device low loss and high performance with exceptional repeatability through millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while the gold backside metallization provides the RF and DC ground. This allows for manual or automatic die attach via electrically conductive silver epoxy or RoHS compliant solders. The MA4BN1840-2 bias network is suitable for the D.C. biasing of PIN diode control circuits. It functions as an RF-DC de-coupling network as well as the D.C. return. The device can also be used as a bi-directional re-active coupler for Schottky detector circuits. D.C. currents up to 150 mA and D.C. voltages up to 50 V may be used.
  • Broad Bandwidth Specified 18 to 40GHz
  • Rugged, Fully Monolithic Glass Encapsulation
  • High RF-DC Isolation
  • Usable 10GHz to 50 GHz
  • Extremely Low Insertion Loss
  • Aerospace and Defense
  • ISM
  • Insertion Loss : 0.2 dB
  • Isolation: 35 dB
  • Breakdown Voltage, Minimum: 50 V
  • Min Frequency: 18,000 MHz
  • Min Frequency: 18,000 MHz
  • Max Frequency: 40,000 MHz
  • DIE
Package Category
  • Die
Part Number Package MACOM Richardson RFPD DigiKey Mouser Rell
Dual Bias Network 18-40GHz
DIE Inquire Buy

Favorite Parts

Log in to MyMACOM to save your favorite parts.

Recently Viewed

  • No Recent Parts found!

Technical Resources



Live Chat

Start Conversation Now


Is this a technical or general inquiry?

Recent Searches


By continuing to use this site you consent to the use of cookies in accordance with our Cookie Policy