Product Detail

GaAs Flip Chip Single
MACOM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of this diode allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, automotive radar detectors, etc. This device can be used through 110 GHz.
Features
  • Low Series Resistance
  • Polyimide Scratch Protection
  • Silicon Nitride Passivation
  • High Cutoff Frequency
  • Low Capacitance
  • Designed for Easy Circuit Insertion
Applications
  • ISM
Specifications
  • Tss: -55 dBm
  • Min Frequency: 0 MHz
  • Junction Capacitance: 0.01 pF
  • Total Capacitance: 0.04 pF
  • Vf: 0.7 
  • Vb: 7 
  • Dynamic Resistance: 7 ohms
  • Test Frequency: 12 GHz
  • Max Frequency: 110,000 MHz
Package
  • ODS-1278
Package Category
  • Surface Mount Die
Part Number Package MACOM Richardson RFPD DigiKey Mouser
MA4E1310
GAAS_FLIP_CHIP
ODS-1278 Inquire

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