The MA4E2532-1113 Series SURMOUNTTM Low
and Medium Barrier, Silicon Schottky Ring Quad
Diodes are fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC™) process.
HMIC™ circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low
loss, microstrip transmission medium. The combination
of silicon and glass allows HMIC™ devices to
have excellent loss and power dissipation characteristics
in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior mechanical
performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge
than conventional beam lead Schottky diodes.
The multi-layer metallization employed in the fabrication
of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all devices
to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0505” outline allows for Surface Mount placement
and multi-functional polarity orientations.