MACOM's MA4GP907 is a Gallium Arsenide (GaAs) flip-chip PIN diode. It is fabricated using an OMCVD epitaxial wafer and a process optimized for high device uniformity and extremely low parasitics. The diode exhibits an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly.
The ultra low capacitance of the MA4GP907 allows for operation up to millimeter frequencies for RF switches and switched phase shifter
applications. The diode is designed for use in pulsed or CW applications, where single digit nS switching speed is required. The low capacitance of the MA4GP907 makes it for use in microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR.