MA4GP907

GaAs PIN Diode

MACOM's MA4GP907 is a Gallium Arsenide (GaAs) flip-chip PIN diode. It is fabricated using an OMCVD epitaxial wafer and a process optimized for high device uniformity and extremely low parasitics. The diode exhibits an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. The ultra low capacitance of the MA4GP907 allows for operation up to millimeter frequencies for RF switches and switched phase shifter applications. The diode is designed for use in pulsed or CW applications, where single digit nS switching speed is required. The low capacitance of the MA4GP907 makes it for use in microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR.

Product Specifications

Part Number
MA4GP907
Description
GaAs PIN Diode
Breakdown Voltage, Minimum(V)
45
Resistance(Ohm)
4.20
Total Capacitance(pF)
0.030
Lifetime(nS)
2
CW Power Dissipation(W)
0.3
Package
Flip Chip DIE
Package Category
Surface Mount Die
ROHS
Yes
Min Frequency(MHz)
100
Max Frequency(MHz)
30000

Features

  • Low Series Resistance
  • Polyimide Scratch Protection
  • Silicon Nitride Passivation
  • Can be Driven by a Buffered TTL
  • 2 Nanosecond Switching Speed
  • Millimeter Wave Switching & Cutoff Frequency
  • Ultra Low Capacitance
  • RoHS Compliant

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

MA4GP907
GaAs,FlipChip,Pin
MA4GP907 Distributors
MADP-001907-13050P
Diode,PIN,AlGaAs,FC
MADP-001907-13050P Distributors