These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.The protective coatings prevent damage to the junction during automated or manual handling.The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeterwave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz.