Product Detail

GaAs Flip Chip Anti-Parallel
These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.The protective coatings prevent damage to the junction during automated or manual handling.The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeterwave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz.
Features
  • Low Series Resistance
  • High Cutoff Frequency
  • Silicon Nitride Passivation
  • Polymide Scratch Protection
  • Designed for Easy Circuit Insertion
  • Low Capacitance
Applications
  • ISM
Specifications
  • Min Frequency: 0 MHz
  • Max Frequency: 80,000 MHz
  • Dynamic Resistance: 4 ohms
  • Total Capacitance: 0.09 pF
  • Vf: 0.7 
  • Vb: 7 
Package
  • ODS-1197
Package Category
  • Surface Mount
Part Number Package MACOM Richardson RFPD DigiKey Mouser
MADS-001318-1197HP
GFCAP1S IN POCKET TAPE
ODS-1197 Inquire

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