Product Detail

MAMF-011070
High Power Switch with Integrated Bias Control

 The MAMF-011070 is a high power broadband PIN diode SPDT switch with a 5 V power management chip designed for 0.7 - 6 GHz TDD-LTE applications. The device features low insertion loss, high isolation with low DC power consumption. It has an integrated bias controller utilizing a boost circuit. This switch requires only a single 5 V supply, and a single TX / RX control signal that is compatible with 1.8 V or 3.3 V logic. 

Applications
  • TD-LTE Basestations
Specifications
  • Low Insertion Loss (Transmit): 0.3 dB
  • Low Insertion Loss (Receive): 0.4 dB
  • Receive Isolation: 43 dB
  • Bias Current (Tx): 140 mA
  • Bias Current (Rx): 90 mA
  • Min Frequency: 0.7 GHz
  • Max Frequency: 6 GHz
  • Input P0.1dB: 68 dBm
Datasheet: Request Datasheet
Model Data (Sparameters)
Package
  • 5 mm 20-lead HQFN
Part Number Package MACOM Richardson RFPD DigiKey Mouser
MAMF-011070
High Power Switch w/Boost Drv, HQNF
5mm HQFN-20LD Inquire
MAMF-011070-001SMB
Diode, Switch (w/Boost Driver), SMB
5mm HQFN-20LD Inquire
MAMF-011070-TR1000
High Power Switch w/Boost Drv, HQNF
5mm HQFN-20LD Inquire
MAMF-011070-TR3000
High Power Switch w/Boost Drv, HQNF
5mm HQFN-20LD Inquire
PT-0018630
SOC052, Cap Die 32pF20%100V, MAMF-011070
WAFER Inquire

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