Product Detail

MRF275G
TMOS
Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz.
Features
  • N-Channel Enhancement Mode Device
  • 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
  • Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF
  • Typical Data for Power Amplifiers in Industrial and Commercial Applications:
  • Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65%
  • Simplified AVC, ALC and Modulation
  • Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60%
  • Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)
Applications
  • Aerospace and Defense
  • ISM
Specifications
  • Min Frequency: 5 MHz
  • Gain: 10 dB
  • Efficiency: 50 %
  • Pout: 150 W
  • Max Frequency: 500 MHz
Package
  • Flange Ceramic Pkg
Package Category
  • Flange Mount
Part Number Package MACOM Richardson RFPD DigiKey Mouser
MRF275G
Transistor, <500MHz, 28V, 150W
CERAMIC
In Stock: 3993
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