Product Detail

MSS30-046-P55
Low Barrier Silicon Schottky Diodes
MACOM's MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Features
  • VF , RD and CJ matching options
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices
Applications
  • ISM
Specifications
  • Total Capacitance: 0.23 pF
  • Vf: 0.29 
  • Vb: 2 
  • Dynamic Resistance: 18 ohms
Package
  • P55
Package Category
  • Ceramic Package
Part Number Package MACOM Richardson RFPD DigiKey Mouser
MSS30-046-P55
Schottky Diode, Chip-Package, P55-1
P55-1 Inquire

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