Product Detail

Silicon Schottky P-Type Diodes: Low Barrier
MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general, they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.
Features
  • Superior 1/f noise.
  • Passivated with silicon nitride.
  • Low barrier height.
  • Better temperature stability than zero bias Schottky diode.
Specifications
  • Total Capacitance: 0.16 pF
  • Dynamic Resistance: 22 ohms
Package
  • E45
Package Category
  • Ceramic Package
Part Number Package MACOM Richardson RFPD DigiKey Mouser
MSS30-CR46-E45
Silicon Schottky P-Type Diodes: Low Barrier
E45 Inquire

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