Product Detail

Silicon Schottky N-Type Diodes: Low Barrier
MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.
  • VF, RD and CJ matching options.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available.
  • Chip, beam lead or packaged devices.
  • Total Capacitance: 0.22 pF
  • Dynamic Resistance: 15 ohms
Datasheet: Request Datasheet
  • E45
Package Category
  • Ceramic Package
Part Number Package MACOM Richardson RFPD DigiKey Mouser
Silicon Schottky N-Type Diodes: Low Barrier
E45 Inquire

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