Product Detail

High Barrier Silicon Schottky Diodes
MACOM's MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.
Features
  • VF , RD and CJ matching options
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices
Applications
  • ISM
Specifications
  • Total Capacitance: 0.2 pF
  • Vf: 0.5 
  • Vb: 4 
  • Dynamic Resistance: 16 ohms
Datasheet: Request Datasheet
Package
  • B21
Package Category
  • Beam Lead
Part Number Package MACOM Richardson RFPD DigiKey Mouser
MSS50-341-B21
High Barrier Silicon Schottky Diodes
B21 Inquire

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