Product Detail

Power Amplifier
MACOM's three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses MACOM's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Features
  • Excellent Saturated Output Stage
  • 100% Visual Inspection to MIL-STD-883 Method 2010
  • 100% On-Wafer RF, DC and Output Power Testing
  • +24.0 dBm Saturated Output Power
  • 20.0 dB Small Signal Gain
  • Competitive RF/DC Bias Pin for Pin Replacement
Applications
  • ISM
  • Wireless Networking and Communication
Specifications
  • Bias Voltage: 6 V
  • Gain: 20 dB
  • Output P1dB: 24 dBm
  • Psat: 24 dBm
  • Bias Current: 320 
  • Min Frequency: 17,000 MHz
  • Max Frequency: 26,000 MHz
Package
  • DIE
Package Category
  • Die/Bumped Die
Part Number Package MACOM Richardson RFPD DigiKey Mouser
XP1013-BD
Power Amplifier
DIE Inquire

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