Product Detail

XP1080-QU
Amplifier
The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.
Features
  • Linear Power Amplifier
  • 260°C Reflow Compatible
  • RoHS* Compliant
  • Lead-Free 7 mm 28-lead SMD Package
  • +38.0 dBm OIP3
  • +27.0 dBm P1dB Compression Point
  • 25.0 dB Small Signal Gain
  • Output Power Adjust
  • On-Chip Power Detector
Applications
  • ISM
  • Wireless Networking and Communication
Specifications
  • Bias Voltage: 4 V
  • Gain: 25 dB
  • Output P1dB: 27 dBm
  • Psat: 28.9 dBm
  • OIP3: 38 dBm
  • Bias Current: 1,000 
  • Min Frequency: 37,000 MHz
  • Max Frequency: 40,000 MHz
Package
  • 7mm LGA-16LD
Package Category
  • Laminate Surface Mount
Lead Finish
  • Electrolytic gold over nickel
Part Number Package MACOM Richardson RFPD DigiKey Mouser
XP1080-QU-0N00
MMIC, SMD, PA, 30dBm Psat, 7x7QFN, BULK
7MM PQFN-28LD Inquire
XP1080-QU-0N0T
MMIC, SMD, PA, 37-40G, 30dBm Psat, 7x7QFN, T&R
7MM PQFN-28LD Inquire
XP1080-QU-EV1
EVAL, XP1080-QU-0N00
7MM PQFN-28LD Inquire

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