RF Power Transistor - GaN on Si - Pulsed

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At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using bipolar, MOSFET, and now GaN technologies to meet our customers’ most demanding needs. Our GaN on Silicon products, offered as discrete transistors and integrated amplifiers utilizing a  0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency,  and ruggedness over wide operating bandwidths.

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Part Number Ordering Short Description Frequency Range (GHz) Supply Voltage (V) PSAT (W) Gain (dB) Test Freq (GHz) Package ADS & SPICE Model Info Application Notes Benefits Bias Current (mA) Bias Voltage (V) Brightcove Video Compatible Parts Content Data Sheet Package Outline Datasheet Device Firmware Duty Cycle (%) ESD EVM GUI Software EVM User Guides Efficiency (%) Features Lead Finish Lead-Free MSL Marking Max Frequency (MHz) Min Frequency (MHz) Model Data (Sparameters) Outline Drawings Package Category Peak Power (W) Product Briefs Product Bulletins Product Image Pulse Width (µS) Qualification Reports ROHS Theta J-C (C/W) Type Voltage (V) - RF Power Transistor
 
 
 
 
 
 
 
 
 
 
 
 
 
 
NPT25015D Buy Gallium Nitride 28V, 23W RF Power Transistor
DC - 3
28 23 14 2.5 SOIC8NE
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
NDS-004 Rev 4 NPT25015.pdf
Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
High reliability gold metallization process
Thermally-enhanced industry standard package
100% RF tested
1.5W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 3.5MHz channel bandwidth, 14dB gain, 23.5% efficiency, 2500-2700MHz
23W P3dB peak nvelope power (PEP)
Subject to EAR99 Export Control
Lead-Free
RoHS Compliant
RoHS Compliant
Yes
3000 0 Plastic
NP00004A_SOIC-8NE_new_logo.jpg
6.3
NPT35015D Buy Gallium Nitride 28V, 18W RF Power Transistor
3 - 4
28 18 11 3.5 SOIC8NE
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
NDS-005 Rev 5 NPT35015.pdf
Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz
Thermally Enhanced Industry Standard Package
100% RF tested
Characterized for Operation up to 32V
1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency
25W P3dB peak Envelope Power
18W P3dB CW Power
Subject to EAR99 Export Contyrol
Lead-Free
High Reliability Gold Metallization Process
RoHS Compliant
Yes
4000 3000 Plastic
NP00004A_SOIC-8NE_new_logo.jpg
6.3
NPT1004D Buy Gallium Nitride 28V, 45W RF Power Transistor
DC - 3
28 45 13 2.5 SOIC8NE
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
NDS-010 Rev 4 NPT1004.pdf
2-Stage High Power MMIC Amplifier
RTH of 2.7°C/W Resulting in 20+ Years of Operation at Max Flange of 90°C at PSAT
Typical 50W Broadband Saturated Power Output Across 1.0-2.0GHz
Unmatched Output for Tuning Flexibility
Input Matched to 50 Ohms
Subject to EAR99 Export Control
Yes
3000 0 Plastic
NP00004A_SOIC-8NE_new_logo.jpg
4.3