RF Power Transistors - GaN on Si - CW

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MACOM is the world’s only provider of GaN on Si technology for RF applications. We offer a broad range of continuous wave (CW) GaN on Si RF power transistor products as discrete devices and modules designed to operate from DC to 6 GHz. Our high power CW and linear transistors are ideal for civil avionics, communications, networks, long pulsed radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using GaN on Si technology to meet our customers’ most demanding needs. Our GaN on Silicon products, offered as discrete transistors and integrated amplifiers utilizing a  0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency,  and ruggedness over wide operating bandwidths.

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Part Number Ordering Short Description Frequency Range (GHz) Supply Voltage (V) PSAT (W) Gain (dB) Test Freq (GHz) Efficiency Package Duty Cycle (%) Theta J-C (C/W) Model Data (Sparameters) Datasheet Max Frequency (MHz) Package Category ROHS Lead-Free Min Frequency (MHz) Application Notes Features Lead Finish Compatible Parts Product Image Brightcove Video ADS & SPICE Model Info
 
 
 
 
 
 
 
 
NPT2021 Buy GaN Wideband Transistor 48 V, 45 W
DC - 2.5
48 45 17 2.5 >55
TO272
1.9 NPT2021_48V_175mA_preliminary.s2p
NPT2021_48V_Vg=-3p0V_preliminary.s2p
NPT2021_48V_350mA_preliminary.s2p
NPT2021_48V_525mA_preliminary.s2p
NPT2021.pdf
2500 Plastic
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN-0004125 - Mounting Methods for High Power RF Plastic Devices
GaN on Si HEMT D-Mode Transistor
55 % Drain Efficiency at 2.5 GHz
100 % RF Tested
TO-272 Package
RoHS* Compliant and 260°C reflow compatible
16.5 dB Gain at 2.5 GHz
48 V Operation
Tunable from DC - 2.5 GHz
Suitable for linear and saturated applications
PPT2022_TO272_small.jpg
NPTB00004D Buy Gallium Nitride 28V, 5W RF Power Transistor
DC - 6
28 5 17 2.5 >55
SOIC8NE
23 NDS-002 Rev 7 NPTB00004.pdf
Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE, and Other Applications from DC to 6GHz
RoHS Compliant
High Reliability Gold Metallization Process
Low Cost, Surface Mount SOIC Package
15.5dB Power Gain
5W P3dB CW Power
100% RF Tested at 2500MHz
Subject to EAR99 Export Control
Lead-Free
NP00004A_SOIC-8NE_new_logo.jpg
NPTB00004A Buy Gallium Nitride 28V, 5W, DC-6 GHz HEMT
DC - 6
28 5 17 2.5 >50
SOIC8NE
15 NPTB00004A_28V_50mA.S2P
NPTB00004A_28V_75mA.S2P
NPTB00004A_28V_250mA.S2P
NPTB00004A_28V_Vg-3V.S2P
NPTB00004A_28V_100mA.S2P
NPTB00004A.pdf
6000 Plastic
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Broadband Operation from DC-6 GHz
Drop in Replacement for NPTB00004
High Drain Efficiency (>55%)
Industry Standard Plastic Package
28V Operation
NP00004A_SOIC-8NE_new_logo.jpg
NPT2022 Buy GaN Wideband Transistor 48 V, 100 W
DC - 2.0
48 100 20 0.9 >60
TO272
1.3 NPT2022_48V 300mA.s2p
NPT2022_48V Vgs-3.s2p
NPT2022_48V 900mA.s2p
NPT2022_48V 600mA.s2p
NPT2022.pdf
2000 Plastic
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN-0004125 - Mounting Methods for High Power RF Plastic Devices
GaN on Si HEMT D-Mode Transistor
20 dB Gain @ 900 MHz
60 % Drain Efficiency @ 900 MHz
100 % RF Tested
Standard plastic package with bolt down flange
48 V Operation
Tunable from DC - 2 GHz
Suitable for linear and saturated applications
RoHS* Compliant and 260°C reflow compatible
PPT2022_TO272_small.jpg
NPT1012B Buy Gallium Nitride 28V, 25W RF Power Transistor
DC - 4
28 25 13 3 >50
Flange Ceramic Pkg
4 NDS-025 Rev 3 NPT1012.pdf
4000 Ceramic
Yes
0 Optimized for Broadband Operation from DC-4000MHz
High Efficiency from 14 - 28V
10-20W P3dB CW Power from 30-1000MHz in application board with >50% drain efficiency
16-20W P3dB CW Power from 1000-2500MHz in application board with >45% drain efficiency
25W P3dB CW Power at 3000MHz
4.0 °C/W RTH with Maximum TJ Rating of 200 °C
Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 °C flange
Subject to EAR99 Export Control
AC200B-new_logo.jpg
NPA1003QA Buy Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
.02 - 1.5
28 5 18 1 >50
4mm PQFN-16LD
12 NPA1003_28V_50mA.S2P
NPA1003_28V_100mA.S2P
NPA1003_28V_m3V.S2P
NPA1003QA.pdf
Plastic Surface Mount
Yes
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Broadband Operation from 20-1500 MHz
High Drain Efficiency (>50%)
Industry Standard QFN Plastic Package
Input and Output Matched to 50 Ohms
28V Operation
4x4 mm-16 lead PQFN.jpg
NPT2018 Buy Gallium Nitride 48V, 12.5W, DC-3.5 GHz HEMT
DC - 3.5
48 12.5 17.5 2.5 >50
6x3mm PDFN-14LD
6.5 NPT2018.pdf
3500 Plastic
Yes
0 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Suitable for Linear and Saturated Applications
Industry Standard Plastic Package
48V Operation
Tunable from DC-6 GHz
High Drain Efficiency (>60%)
NPT2018_DFN3x6-14_new_logo.jpg
NPT2020 Buy Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
DC - 3.5
48 50 17 2.1 >60
Flange Ceramic Pkg
2.3 NPT2020_48V_175mA.s2p
NPT2020_48V_Vgs=-3V.s2p
NPT2020_48V_350mA.s2p
NPT2020_48V_525mA.s2p
NPT2020.pdf
Ceramic
Yes
Suitable for Linear and Saturated Applications
High Drain Efficiency (>60%)
Industry Standard Package
48V Operation
Tunable from DC-3.5 GHz
AC360B-new_logo_small.jpg
NPT1015B Inquire Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
DC - 3.5
28 45 14 2.5 >55
Flange Ceramic Pkg
2.1 NPT1015_28V_200mA.s2p
NPT1015_28V_600mA.s2p
NPT1015_28V_400mA.s2p
NPT1015_28V_Vgs=-3V.s2p
NPT1015B.pdf
Ceramic
Yes
Suitable for Linear and Saturated Applications
Rugged Design Passes 15:1 VSWR test
High Drain Efficiency (>55%)
Industry Standard Package
28V Operation
Tunable from DC-3.5 GHz
Reliable with MTTF > 106 at TJ = 200°C
AC360B-new_logo_small.jpg
NPT1010B Buy Gallium Nitride 28V, 100W RF Power Transistor
DC - 2
28 100 20 0.9 >57
Flange Ceramic Pkg
1.4 NDS-023 Rev 3 NPT1010.pdf
Ceramic
Yes
Optimized for Broadband Operation from DC – 2000MHz
100W P3dB CW Power at 900MHz
60-95 W PSAT CW Power from 500-1000MHz in broadband application design
High efficiency from 14 - 28V
1.4 °C/W RTH with Maximum TJ Rating of 200°C
Robust up to 10:1 VSWR Mismatch at all Phase Angles with No Damage to the Device
Subject to EAR99 Export Control
AC360B-new_logo_small.jpg
NPTB00050B Inquire Gallium Nitride 28V, 50W RF Power Transistor
DC-4.0GHz
28 Flange Ceramic Pkg
3.2 Inquire Ceramic
Yes
Optimized for Broadband Operation from DC - 4000MHz
Characterized for Operation up to 32V
25W P3dB CW Broadband Power from 500-1000MHz
50W P3dB CW Narrowband Power
Thermally Enhanced Industry Standard Package
100% RF Tested
Lead-Free
High Reliability Gold Metallization Process
Subject to ECCN 3A982.a.1 Export Control
RoHS Compliant
AC360B-new_logo_small.jpg
NPT25100B Buy Gallium Nitride 28V, 125W RF Power Transistor
DC - 2.7
28 90 16 2.5 >55
Flange Ceramic Pkg
1.8 NDS-001 Rev 6 NPT25100.pdf
Ceramic
Yes
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz
High Reliability Gold Metallization Process
Thermally Enhanced Industry Standard Package
100% RF Tested
Characterized for Operation up to 32V
10W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
90W P3dB CW Power
125W P3dB Peak Envelope Power
Lead-Free
Subject to ECCN 3A982.a.1 Export Control
RoHS Compliant
AC780B-new_logo_small.jpg
NPTB00025B Buy Gallium Nitride 28V, 25W RF Power Transistor
DC - 4
28 25 13 3 >50
Flange Ceramic Pkg
5.3 NDS-006 Rev 4 NPTB00025.pdf
4000 Ceramic
Yes
0 Optimized for Broadband Operation from DC - 4000MHz
Thermally Enhanced Industry Standard Package
100% RF Tested
Characterized for Operation up to 32V
10W P3dB CW Broadband Power from 500-1000MHz
25W P3dB CW Narrowband Power
Subject to EAR99 Export Control
Lead-Free
High Reliability Gold Metallization Process
RoHS Compliant
NPT2010 Buy Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
DC - 2.2
48 100 17 2.1 >60
Flange Ceramic Pkg
1.7 NPT2010_48V_300mA.s2p
NPT2010_48V_600mA.s2p
NPT2010_48V_Vgs=-3V.s2p
NPT2010_48V_900mA.s2p
NPT2010.pdf
Ceramic
Yes
Suitable for Linear and Saturated Applications
High Drain Efficiency (>60%)
Industry Standard Package
48V Operation
Tunable from DC-2.2 GHz
AC360B-new_logo_small.jpg
NPT35050AB Buy Gallium Nitride 28V, 65W RF Power Transistor
3.3 - 3.8
28 50 13 3.5 >40
Flange Ceramic Pkg
2 NDS-003 Rev 3 NPT35050A.pdf
Ceramic
Yes
Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz
Thermally enhanced industry standard package
100% RF Tested
Qualified for Operation up to 32V
6W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB peak/avg, 3.5MHz Channel Bandwidth, 12dB Gain, 18% Efficiency
65W P3dB CW Power
90W P3dB PEP Power
Subject to 3A001b.3.a Export Control
Lead-Free
High Reliability Gold Metallization Process
RoHS Compliant
AC780B-new_logo_small.jpg
NPA1007 Inquire GaN Wideband Power Amplifier, 28 V, 10 W
.03-2.5
28 10 10 2 >50
6x5mm 8-lead PDFN
2000 Inquire 2500 6x5mm 8-lead PDFN
Yes
30 GaN on Si HEMT D-Mode Amplifier
100% RF Tested
42% PAE @ 2500 MHz
13.5 dB Gain @ 2500 MHz
28 V Operation
Broadband operation from 20-2500 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
Lead-Free 6 x 5 mm 8-lead PDFN Package
50 O Input Matched, Output Unmatched
RoHS* Compliant and 260°C Reflow Compatible
NPA1007.png
NPT25100P Inquire Gallium Nitride 28V, 125W RF Power Transistor
DC - 2.7
28 90 16 2.5 >55
Flange Ceramic Pkg
1.8 NDS-001 Rev 6 NPT25100.pdf
Ceramic
Yes
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz
10W linear power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
Characterized for Operation up to 32V
100% RF Tested
Thermally Enhanced Industry Standard Package
High Reliability Gold Metallization Process
Lead-Free
125W P3dB Peak Envelope Power
90W P3dB CW Power
Subject to ECCN 3A982.a.1 Export Control
RoHS Compliant
AC780P-small_new_logo.jpg
NPTB00025AB Inquire Gallium Nitride 28V, 25W RF Power Transistor
DC - 4
28 25 13 3 >60
Flange Ceramic Pkg
5.3 NDS-006 Rev 4 NPTB00025.pdf
Ceramic
Yes
Optimized for Broadband Operation from DC - 4000MHz
10W P3dB CW Broadband Power from 500-1000MHz
Characterized for Operation up to 32V
100% RF Tested
Thermally Enhanced Industry Standard Package
Subject to EAR99 Export Control
25W P3dB CW Narrowband Power
Lead-Free
RoHS compliant
AC200B-new_logo.jpg
MAGx-011086 Buy GaN Wideband Transistor 28 V, 5 W DC - 6 GHz
DC - 6.0
28 4 9 5.8 >50
4mm PQFN-24LD
17 MAGX-011086.pdf
6000 Plastic
Yes
0 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Broadband operation from DC-6 GHz
Industry Standard Plastic Package
28V Operation
High Drain Efficiency (>60%)
4x4_24-lead PQFN.jpg
NPA1008 Buy GaN Wideband Power Amplifier, 28 V, 5 W
.02-2.7
28 5 12 1.9 >45
4x4mm 24-lead PQFN
1900 NPA1008.pdf
2700 QFN Plastic Package
Yes
20 GaN on Si HEMT D-Mode Integrated Amplifier
100% RF Tested
45% Drain Efficiency
28 V Operation
50 O Input Matched
Wideband tuned from 20 - 2700 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
Lead-Free 4 x 4 mm 24-lead PQFN Package
RoHS* Compliant and 260°C Reflow Compatible
NPA1008.PNG
NPA1006 Inquire GaN Wideband Power Amplifier, 28 V, 12.5 W
.02-1
28 12.5 14 0.9 >45
6x5mm 8-lead PDFN Package
900 NPA1006.pdf
1000 PDFN Plastic Package
Yes
20 GaN on Si HEMT D-Mode Amplifier
Lead-Free 6 x 5 mm 8-lead PDFN Package
100% RF Tested
65% Drain Efficiency @ 900 MHz
14 dB Gain @ 900 MHz
28 V Operation
50 O Input Matched, Output Unmatched
Broadband operation from 20 - 1000 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
RoHS* Compliant and 260°C Reflow Compatible
NPA1006.PNG
NPT2024 Inquire GaN Wideband Transistor 50 V, 200 W
20 MHz to 3.0 GHz
50 200 20 0.9 65
TO272
Inquire 2700 TO272
Yes
0 GaN on Si HEMT D-Mode Transistor
100 % RF Tested
68 % Drain Efficiency @ 900 MHz
22 dB Gain @ 900 MHz
50 V Operation
Tunable from DC - 2.7 GHz
Suitable for linear and saturated applications
RoHS* Compliant and 260°C reflow compatible
Standard plastic package with bolt down flange
TO272.jpg
MATR-GSHC03-160150 Inquire GaN Wideband Transistor Die
DC-3.5
28 45 12 2.5 Die
MATR-GSHC03-160150.pdf
Die
GaN on Si HEMT D-Mode Transistor Die
54% Drain Efficiency @ 2.5 GHz
12 dB Gain @ 2.5 GHz
28 V Operation
Broadband Operation DC - 3.5 GHz
Suitable for linear and saturated applications
Active Area Periphery: 16 mm
100% DC Tested
RoHS* Compliant
Chip Dimensions: 0.60 mm x 4.49 mm x 0.1 mm
Export Classification: EAR99
MACOM Gen.png
MAGe-102425-300 Inquire 300 W MACOM GaN Power Transistor
50 300 16 2.45 70
TO-272S-4
Inquire 2500 Plastic
Yes
2400 TO272S-4.png
5554824255001
MAGx-101214-500L00 Inquire 500 W GaN on Silicon Transistor
1.2 – 1.4 GHz
50 500 16 72
Ceramic Surface Mount
Inquire Yes
MAGx.png