Gallium arsenide (GaAs) contains electronic properties superior to those of silicon, such as higher saturated electron velocity and higher electron mobility, allowing GaAs transistors to function at frequencies over 250 GHz. Due to its wide band gap, GaAs is an ideal material for Monolithic Microwave Integrated Circuits (MMICs), where active and essential passive components can be readily produced on a single slice of GaAs.
For over three decades, MACOM has been the world leader in the advancement of GaAs producing state-of-the-art, high performance discrete devices; control components; mixed signal processing and converters; driver amplifiers; CATV amplifiers; LNAs; and power amplifiers as single purpose and multi-function MMICs. MACOM introduced the first pseudomorphic High Electron Mobility Transistors (pHEMT) supporting high volume components required for commercial applications. MACOM is currently advancing pHEMT design and development with the PH4 and PH6 power processes at the 0.5 mm and 0.25 mm gate nodes. These processes prove to be extremely versatile and continue to demonstrate leading edge performance in the production of multi-function MMICs for Aerospace & Defense and commercial applications.