Linear Amplifiers

At MACOM we design, manufacture, and support a wide variety of power amplifiers for RF, microwave, and millimeter wave applications. Our Power amplifiers cover 40 KHz to 90 GHz operation for a wide range of both linear and saturated applications, including network infrastructure, radar, test and measurement and communication systems. Many of the power amplifiers include an on-chip temperature-compensated detector. Power amplifiers offer power up to 15W of power and are offered in a variety of package types for different applications.

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Part Number	Ordering	Short Description	Min Frequency (MHz)	Max Frequency (MHz)	Gain (dB)	OIP3 (dBm)	Output P1dB (dBm)	Package	Model Data (Sparameters)	NF (dB)	Bias Voltage (V)	Bias Current (mA)	Pulse Width (µS)	Input IP3 (dBm)	75 Ohm	Package Category	Lead-Free	Datasheet	Application Notes	Features	Marking	Lead Finish	Product Image	Brightcove Video	ROHS	Psat (dBm)

MAAP-011106	Inquire	Power Amplifier, 71 - 86 GHz	71000	86000	20	30		DIE							No	DIE	Yes	MAAP-011106.pdf	AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	4 Stage Power Amplifier for E Band RoHS* Compatiable 260°C reflow compatible HBM ESD rating of 100 V Size: 3780x2500x50µm Bare Die Integrated Detector Variable Gain with Adjustable Bias 30 dBm OIP3 25 dBm Saturated Output Power 15 dB Input and Output Match 20 dB Gain
MAAP-015035	Inquire	Power Amplifier, 12 W 8.5 - 11.5 GHz	8500	11500	36			DIE			8				No	Bare DIE	Yes	Datasheet MAAP-015035.pdf	AN3009 - S-Parameter S2P File Format Guide AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	36 dB Small Signal Gain 100% On-wafer DC & RF Power Tested On Chip Gate Bias Circuit 40% Power Added Efficiency 41 dBm Saturated Pulsed Output Power 100% Visual Inspection to MIL-STD-833			MACOM_general.png
MAAM-011117	Inquire	75 ohm, 5V RF Amplifier 50 - 2700 MHz	50	2700	16	35	20	2mm PDFN-8LD	MAAM-011117.S2P	2.7	5	85			Yes	Plastic Surface Mount	Yes	MAAM-011117.pdf	AN3009 - S-Parameter S2P File Format Guide M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	Low Power Consumption: 5V, 85 mA. 260°C Reflow Compatible RoHS* Compliant Halogen-Free “Green” Mold Compound Lead-Free 2mm PDFN-8LD Plastic Package Low Distortion Performance Current Adjust Power Down Control: IDD < 4 mA Low Noise: 2.7 dB 16 dB Flat Gain: 50 MHz - 2700 MHz	46	100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C	2x2mm_8-lead PQFN.jpg	3203580879001	Yes
XP1017-BD	Inquire	30.0-36.0 GHz GaAs MMICPower AmplifierAbsolute	30000	36000	16	33	24	DIE	XP1017-BD.zip		5	440			No	Die/Bumped Die	Yes	XP1017-BD.pdf	AN3009 - S-Parameter S2P File Format Guide AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	Balanced Design Provides Good Input/Output Match 100% Visual Inspection to MIL-STD-883Method 2010Frequency 100% On-Wafer RF, DC and Output Power Testing +33.0 dBm Third Order Intercept (OIP3) 16.0 dB Small Signal Gain On-Chip Temperature Compensated Output Power Detector			MACOM_general.png
XP1044-QL	Inquire	3W Power Amplifier Module 4.0-5.9 GHz	4000	5900	18.5	47	34	7mm SMD-28LD	XP1044-QL.zip		8	900			No	Plastic	Yes	XP1044-QL.pdf	AN3009 - S-Parameter S2P File Format Guide M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	34 dBm P1d 7x7mm Surface Mount Package Input Internally Matched 8V Voltage Supply 18.5 dB Gain 46 dBm OIP3 2.5% (PAR=9.17 dB) Pout 26 dBm @ EVM Ideal for WiMAX Applications @ 5.8 GHz RoHS* Compliant 260°C Reflow Compatible Applications between 4 GHz and 5 GHz	XP1044QL		MACOM_general.png
MAAP-015024	Inquire	Power Amplifier, 8 W 14.5 - 17.5 GHz	14500	17500	21	27		DIE				5			No	Die/Bumped Die	Yes	MAAP-015024.pdf	AN3009 - S-Parameter S2P File Format Guide AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	8 W Power Amplifier Bare Die 100% Visual Inspection to MIL-STD-833 100% On-wafer DC & RF Power Tested Dual Sided Bias Architecture 39 dBm Saturated Pulsed Output Power 20 dB Small Signal Gain			MACOM_general.png
MAAP-010516	Inquire	3 W Power Amplifier	12700	13300	23	42	34	5mm PQFN-24LD							No	Plastic Surface Mount	Yes	MAAP-010516.pdf	AN3009 - S-Parameter S2P File Format Guide M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	23 dB Small Signal Gain 260°C Reflow Compatible RoHS* Compliant Lead-Free 5 mm 24-lead QFN Package Bias 1200 mA @ 6 V Integrated Power Detector >2.5 W Output P1dB 42 dBm Third Order Intercept Point (OIP3)			5x5 24-lead PQFN.jpg		Yes
XP1050-QJ	Inquire	2.5 W Power Amplifier 7.1 - 8.5 GHz	7100	8500	15.5	47		6 mm 24-lead QFN							No	Plastic Surface Mount	Yes	XP1050-QJ.pdf	AN3009 - S-Parameter S2P File Format Guide M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	15.5 dB Small Signal Gain 260°C Reflow Compatible RoHS* Compliant Lead-Free 6 mm 24-lead QFN Package Integrated Power Detector 2 W P1dB 47 dBm Third Order Intercept Point (OIP3)	XP1050-QJ		6x6 24-lead PQFN.jpg		Yes
MAAM-011167	Inquire	E-Band Power Amplifier, 71 - 86 GHz	71000	86000	18	27	10	Die in Vacuum release gel pack	MAAM-011167.zip					10	No	Bare Die	Yes	MAAM-011167.pdf		4 Stage Driver Amplifier for E-Band 20 dB Gain 10 dB Input and Output Match 27 dBm Saturated Output Power 32 dBm OIP3 Variable Gain with Adjustable Bias Integrated Detector Bare die RoHS* Compliant and 260°C Reflow Compatible HBM ESD rating of 200 V Size: 3780 x 1500 x 50 µm Wide dynamic range power detector					Yes
MAAM-011139	Inquire	Driver Amplifier 27.5 - 33.4 GHz	27500	33400	21	32	20	4mm 24-LD QFN Package	MAAM_011139.s2p						No	Plastic Surface Mount	Yes	MAAM-011139.pdf	AN3009 - S-Parameter S2P File Format Guide M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	3 Stage Driver Amplifier for 28/32 GHz Bands 20 dBm Output P1dB 32 dBm Output Third Order Intercept (OIP3) 21 dB Gain			4x4_24-lead PQFN.jpg		Yes
XP1019-BD	Inquire	17.0-24.0 GHz GaAs MMIC Power Amplifier	17000	24000	18	36	27	DIE			5				No	Die/Bumped Die	Yes	XP1019-BD.pdf	AN3009 - S-Parameter S2P File Format Guide AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)	Excellent Transmit Output Stage 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010 100% On-Wafer RF, DC and Output Power Testing +27.0 dBm P1dB Compression Point 18.0 dB Small Signal Gain Temperature Compensated Output Detector			MACOM_general.png
XP1027-BD	Inquire	Power Amplifier 27.0-31.0 GHz	27000	31000	21	43		Die							No	Die	Yes	Inquire		Ka-Band 4 W Power Amplifier RoHS* Compliant and 100% Visual Inspection to MIL-STD-883 Method 2010 100% On-Wafer RF, DC and Output Power Testing +43.0 dBm Output Third Order Intercept (OIP3) +35.5 dBm Saturated Output Power 21.0 dB Small Signal Gain Balanced Design Provides Good Input/Output Match 260°C Reflow Compatible			MACOM_general.png		Yes
XP1026-BD	Inquire	Power Amplifier 27.0-32.0 GHz	27000	32000	21	40	32	Die			5	900	34		No	Die	Yes	XP1026-BD.pdf		Ka-Band 2W Power Amplifier 100% Visual Inspection to MIL-STD-883 Method 2010 100% On-Wafer RF, DC and Output Power Testing +40.0 dBm Output Third Order Intercept (OIP3) +33.0 dBm Saturated Output Power 21.0 dB Small Signal Gain RoHS* Compliant 260°C Reflow Compatible			Macom_general.png		Yes	33

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