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At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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| Part Number | Ordering | Short Description | Min Frequency (MHz) | Max Frequency (MHz) | Insertion Loss (dB) | Isolation (dB) | IIP3 (dBm) | IP1dB (dBm) | 75 Ohm | ADS & SPICE Model Info | Application Notes | Benefits | Brightcove Video | CW Incident Power (W) | Compatible Parts | Configuration | Content | DC Power | Data Sheet Package Outline | Datasheet | Device Firmware | Driver | ESD | EVM GUI Software | EVM User Guides | Features | Lead Finish | Lead-Free | MSL | Marking | Model Data (Sparameters) | Outline Drawings | Package | Package Category | Product Briefs | Product Bulletins | Product Image | Qualification Reports | ROHS | VSWR |
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| MASW-011053 | Inquire |
HMIC Silicon PIN Diode SP3T Switch
|
2000 | 18000 | 0.8 | 50 | 48 |
No
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
MASW-011053.pdf
|
Broad Bandwidth Specified up to 18 GHz
Fully Monolithic Low Insertion Loss / High Isolation Integrated Bias Network Usable up to 26 GHz RoHS Compliant* and 260°C Reflow Compatible Glass Encapsulate Construction |
Yes
|
MASW_011053_S-Parameters.zip
MASW_011053_S2P.zip |
DIE
|
Die/Bumped Die
|
MASW-011053.jpg
|
||||||||||||||||||||||||
| MASW-007074-000100 | Inquire |
GaAs SP3T Absorptive Switch with ASIC Driver, DC-3.0 GHz
|
0 | 3000 | 2 | 32 | 45 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components M538 - Surfacing Mounting Instructions - Footprint Guidelines S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
MASW-007074.pdf
|
Typical Isolation: 32 dB (2,000 MHz)
Typical Insertion Loss: 2.0 dB (2,000 MHz) Integral ASIC TTL/CMOS Driver Low DC Power Consumption 50 Ohm Nominal Impedance Tape and Reel Packaging Available Test Boards Available Lead-Free SOW-24 Package 100% Matte Tin Plating over Copper 260°C Reflow Compatible Halogen-Free “Green” Mold Compound RoHS* Compliant Version of SW65-0214 |
Yes
|
SOW24
|
Plastic Surface Mount
|
MACOM_general.png
|
|||||||||||||||||||||||||
| MASWSS0200 | Inquire |
GaAs CDMA-GPS
|
500 | 2500 | 0.6 | 24 | 61 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASWSS0200.pdf
|
Without
|
Balanced (symmetrical) RF Ports
260°C Reflow Compatible Halogen-Free “Green” Mold Compound 100% Matte Tin Plating over Copper Lead-Free 3 mm 12-Lead PQFN Package 0.5 Micron GaAs pHEMT Process High Isolation: 21 dB at 2 GHz Low Insertion Loss: 0.55 dB at 1 GHz Low Cross Modulation RoHS* Compliant Version of MASWSS0060 |
100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
|
Yes
|
78
|
3mm PQFN-12LD
|
Plastic Surface Mount
|
3x3 pfqn 12 lead.jpg
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|||||||||||||||||||||
| MASWSS0144 | Inquire |
GaAs CDMA-GPS
|
500 | 3000 | 0.6 | 24 | 55 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASWSS0144.pdf
|
Without
|
CDMA Handset Switching Applications
RoHS* Compliant 260°C Reflow Compatible Halogen-Free “Green” Mold Compound Lead-Free 2 mm 12-Lead STQFN with 0.4 mm lead pitch package 0.5 micron GaAs pHEMT Process High Power: P0.1dB = 36 dBm @ 1 GHz High Isolation: 27 dB @ 1 GHz Low Insertion Loss: 0.55 dB @ 1 GHz Low Cross Modulation Balanced (symmetrical) RF Ports |
Yes
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3mm PQFN-12LD
|
Plastic Surface Mount
|
2x2mm STQFN 12-lead.jpg
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|||||||||||||||||||||||
| MASWSS0199 | Inquire |
GaAs CDMA-GPS
|
0 | 2500 | 0.5 | 30 | 58 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASWSS0199.pdf
|
Without
|
Unbalanced (asymmetric) RF Paths
RoHS* Compliant Version of MASWSS0065 260°C Reflow Compatible Halogen-Free “Green” Mold Compound 100% Matte Tin Plating over Copper Lead-Free 3 mm 12-lead PQFN Package 0.5 micron GaAs pHEMT Process High Isolation: 20 dB at 2.0 GHz Low Insertion Loss: 0.5 dB at 1.0 GHz Low Cross Modulation |
Yes
|
3mm PQFN-12LD
|
Plastic Surface Mount
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3x3 pfqn 12 lead.jpg
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|||||||||||||||||||||||
| MA4AGSW3 | Buy |
AlGaAs Reflective
|
50 | 50000 | 0.6 | 48 |
No
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches AN3021 - PIN Diodes for Microwave Switch Designs |
3203639713001
|
SP3T
|
MA4AGSW3.pdf
|
Without
|
Ultra Broad Bandwidth : 50 MHz to 50 GHz
RoHS Compliant* 260°C Reflow Compatible Polymer Scratch Protection Silicon Nitride Passivation M/ACOM’s unique AlGaAs Hetero-Jjunction Anode Technology +10mA for Isolation state -10mA for low loss state Low Current consumption 31 dB Isolation at 50 GHz 0.8 dB Insertion Loss Functional Bandwidth : 50 MHz to 70 GHz |
Yes
|
MA4AGSW3_SPAR.zip
|
DIE
|
Die
|
MACOM_general.png
|
Yes
|
|||||||||||||||||||||
| MA4SW310B-1 | Inquire |
HMIC PIN Diode with Bias
|
2000 | 26000 | 1.2 | 47 | 40 |
No
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches AN3021 - PIN Diodes for Microwave Switch Designs |
SP3T
|
MA4SW210B_310B.pdf
|
Without
|
Broad Bandwidth Specified 2 to 18 GHz
RoHS Compliant Polymer Protective Coating Glass Encapsulate Fully Monolithic Construction Integrated Bias Network Usable up to 26 GHz Low Insertion Loss / High Isolation |
Yes
|
MA4SW310B-1_SPAR.zip
|
DIE
|
Die/Bumped Die
|
MACOM_general.png
|
||||||||||||||||||||||
| MA4SW310 | Buy |
HMIC™ PIN Diode
|
50 | 26500 | 0.8 | 48 | 40 |
No
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches AN3021 - PIN Diodes for Microwave Switch Designs |
SP3T
|
MA4SWx10Series.pdf
|
Without
|
Broad Bandwidth
50 nS Switching Speed Up to +30dBm C.W. Power Handling @ +25°C Glass Encapsulated Chip with Polymer Protective Coating Rugged Design Fully Monolithic Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs Usable from 50 MHz to 26.5 GHz Specified from 50 MHz to 20 GHz |
Yes
|
MA4SW310_spar.zip
|
DIE
|
Die/Bumped Die
|
DIE MA4SW310.JPG
|
||||||||||||||||||||||
| MASW-003100-1192 | Inquire |
HMIC™ PIN Diode
|
50 | 26500 | 0.3 | 65 | 40 |
No
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASW-00x100.pdf
|
Without
|
Broad Bandwidth
RoHS Compliant Up to +33dBm C.W. Power Handling Glass Encapsulated Construction Fully Monolithic Rugged Lower Insertion Loss / Higher Isolation than pHempt Usable from 50MHz to 26.5GHz Specified from 50MHz to 20GHz |
Yes
|
DIE
|
Die/Bumped Die
|
MACOM_general.png
|
|||||||||||||||||||||||
| MASW-003103-1364 | Inquire |
HMIC™ Si PIN Diode
|
50 | 20000 | 0.8 | 40 | 40 |
No
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M541 - Bonding, Handling, and Mounting Procedures for Chip Diode Devices AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
4487668663001
|
SP3T
|
MASW-003103-1364.pdf
|
Without
|
Specified from 50 MHz to 20 GHz
Polymer Scratch Protection Silicon Nitride Passivation Up to +38 dBm C.W. Power Handling1 @ +25°C Glass Encapsulated Construction Rugged, Fully Monolithic RoHS Compliant Surmount™ Package Low Parasitic Capacitance and Inductance High Isolation Low Insertion Loss Usable up to 26 GHz |
Yes
|
MASW-003103-1364.zip
|
Surmount Die
|
Surface Mount Die
|
MACOM_general.png
|
Yes
|
||||||||||||||||||||
| MASW-003102-13590 | Inquire |
HMIC™ Si PIN Diode with Bias
|
2000 | 18000 | 0.8 | 50 | 40 |
No
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASW-00x102 Series.pdf
|
Without
|
Broad Bandwidth Specified up to 18 GHz
RoHS* Compliant 260°C Reflow Compatible Glass Encapsulate Construction Fully Monolithic Low Insertion Loss / High Isolation Integrated Bias Network Usable up to 26 GHz Rugged |
Yes
|
MASW-003102_SPAR.zip
|
DIE
|
Die/Bumped Die
|
MACOM_general.png
|
Yes
|
|||||||||||||||||||||
| MASW-010612 | Inquire |
GaAs SP3T Switch
|
0 | 3500 | 0.6 | 21 | 54 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASW-010612.pdf
|
Without
|
Low Insertion Loss: 0.6 dB
RoHS* Compliant 260°C Reflow Compatible Halogen-Free “Green” Mold Compound Lead-Free 1.5 mm 8-Lead PDFN Package 1.8 V Operation with 1.8 V on Voltage Pull Up Fast Settling Speed for timing-sensitive applications 0.5 micron GaAs pHEMT Process High P1dB: 36 dBm |
Yes
|
1.5mm PDFN-8LD
|
Plastic Surface Mount
|
1.5 mm_8-lead PQFN.jpg
|
|||||||||||||||||||||||
| MASW-011030 | Inquire |
High Power SP3T 100W Reflective Switch
|
30 | 3000 | 0.2 | 50 | 62 |
No
|
4358709035001
|
MASW-011030.pdf
|
Power Handling: 100 W @ 85°C
Insertion Loss: 0.35 dB @ 2 GHz Isolation: 40 dB @ 2 GHz Surface Mount 7 mm 16-lead HQFN Package Suitable for High Power Military and Civilian Radio Applications RoHS* Compliant and 260°C Reflow Compatible Class 1B HBM ESD Rating |
Yes
|
MASW-011030_Spar_ext_bias_tees.zip
|
7 mm 16-lead HQFN Package
|
Plastic Surface Mount
|
Product Image - MASW-011030.jpg
|
||||||||||||||||||||||||
| MASW-011041 | Inquire |
Switch, SP3T 200 W
|
50 | 1000 | 0.3 | 51 |
No
|
5796223416001
|
MASW-011041 (2).pdf
|
200 W CW Incident Power @ +85°C
Operates from +V DC Bias Only Harmonics: <-70 dBc High Isolation: >40 dB Low Insertion Loss: <0.5 dB Halogen-Free “Green” Mold Compound Lead-Free 9 mm HQFN 20-lead Package RoHS* Compliant and 260°C Reflow Compatible |
Yes
|
9 mm HQFN 20-lead Package
|
9 mm 20-Lead HQFN
|
Yes
|
||||||||||||||||||||||||||
| MASW-009359 | Inquire |
GaAs
|
0 | 4000 | 0.6 | 27 | 65 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASW-009359.pdf
|
Without
|
CDMA Handset Switching Applications
RoHS* Compliant 260°C Reflow Compatible Halogen-Free “Green” Mold Compound Lead-Free 2 mm 12-Lead STQFN with 0.4 mm lead pitch package 0.5 micron GaAs pHEMT Process High Power: P0.1dB = 36 dBm @ 1 GHz High Isolation: 27 dB @ 1 GHz Low Insertion Loss: 0.55 dB @ 1 GHz Low Cross Modulation Balanced (symmetrical) RF Ports |
Yes
|
MASW-009359_S4P_Files.zip
|
2mm STQFN-12LD
|
Plastic Surface Mount
|
2x2mm STQFN 12-lead.jpg
|
||||||||||||||||||||||
| MASW-008955 | Inquire |
GaAs
|
0 | 3000 | 0.5 | 22 | 54 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASW-008955.pdf
|
Without
|
Low Insertion Loss: 0.55 dB @ 2.45 GHz
1.8 V Operation with 1.8 V on Voltage Pull Up Low gate lag for timing sensitive applications 260°C Reflow Compatible Halogen-Free “Green” Mold Compound Lead-Free 2 mm 8-Lead PDFN Package 0.5 micron GaAs pHEMT Process High P1dB: 35 dBm @ 2.6 V |
Yes
|
MASW_008955_SParameters.zip
|
2mm PDFN-8LD
|
Plastic Surface Mount
|
2mm 8 lead.jpg
|
Yes
|
|||||||||||||||||||||
| MASW-008330 | Buy |
GaAs SP3T 2.5 V Switch DC - 3.0 GHz
|
500 | 3000 | 0.3 | 24 | 50 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASW-008330.pdf
|
Without
|
Low Voltage Operation: 2.5V
RoHS* Compliant version of MASWSS0028 260°C Reflow Compatible Halogen-Free “Green” Mold Compound 100% Matte Tin Plating over Copper Lead-Free 2 mm 8-Lead PDFN Package 0.5 micron GaAs PHEMT Process Low Insertion Loss: 0.3 dB at 1 GHz |
Yes
|
MASW-008330_Spars_boardLoss_De-embedded.zip
|
2mm PDFN-8LD
|
Plastic Surface Mount
|
2mm 8 lead.jpg
|
||||||||||||||||||||||
| MASW-009482 | Inquire |
GaAs
|
50 | 4000 | 0.7 | 23 | 65 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASW-009482.pdf
|
Without
|
CDMA Handset Switching Applications
RoHS* Compliant 260°C Reflow Compatible Halogen-Free “Green” Mold Compound Lead-Free 2 mm 12-Lead STQFN Package with 0.5 mm Lead Pitch 0.5 micron GaAs pHEMT Process High Power: P0.1dB = 36 dBm @ 1 GHz High Isolation: 27 dB @ 1 GHz Low Insertion Loss: 0.55 dB @ 1 GHz Low Cross Modulation Balanced (symmetrical) RF Ports |
100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
|
Yes
|
30
|
2mm STQFN-12LD
|
Plastic Surface Mount
|
2x2mm STQFN 12-lead.jpg
|
|||||||||||||||||||||
| MASWSS0191 | Buy |
GaAs
|
500 | 3000 | 0.7 | 30 | 58 |
No
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
MASWSS0191.pdf
|
Without
|
Optimized RF Paths
100% Matte Tin Plating over Copper Lead-Free 2 mm 8-lead STDFN Package 0.5 micron GaAs pHEMT Process High Isolation: 21.5 dB at 1.9 GHz (PCS) Low Insertion Loss: 0.7 dB at 820 MHz (Cell) Low Cross Modulation 260°C Reflow Compatible Halogen-Free “Green” Mold Compound RoHS* Compliant |
Yes
|
2mm STDFN-8LD
|
Plastic Surface Mount
|
2x2mm_8-lead.jpg
|
|||||||||||||||||||||||
| MSW3101-310 | Inquire |
Surface Mount SP3T Switches
|
400 | 4000 | 0.5 | 43 |
No
|
50 |
Symmetrical SP3T
|
+V Only
|
MSW310x-310.pdf
|
Wide frequency range: 50 MHz to 4 GHz, in 2 bands
Higher average power handling than plastic packaged MMIC switches: 158 W C Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H High RF peak power: 500 W High IIP3: 65 dBm Low Insertion loss: 0.45 dB RoHS compliant Operates from positive voltage: +5 V & +28 V to +125 V |
Yes
|
8 mm L x 8 mm W x 2.5 mm H
|
Plastic Surface Mount
|
SP3T.PNG
|
1.4:1
|
|||||||||||||||||||||||
| MSW3100-310 | Inquire |
Surface Mount SP3T Switches
|
50 | 1000 | 0.3 | 57 |
No
|
50 |
Symmetrical SP3T
|
+V Only
|
MSW310x-310.pdf
|
Wide frequency range: 50 MHz to 4 GHz, in 2 bands
Higher average power handling than plastic packaged MMIC switches: 158 W CW Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H Low Insertion loss: 0.45 dB High RF peak power: 500 W High IIP3: 65 dBm Operates from positive voltage: +5 V & +28 V to +125 V RoHS Compliant |
Yes
|
8 mm L x 8 mm W x 2.5 mm H
|
Plastic Surface Mount
|
SP3T.PNG
|
1.2:1
|
|||||||||||||||||||||||
| MSW3103-310 | Inquire |
Surface Mount SP3T Switches
|
50 | 1000 | 0.4 | 34 | 64 |
No
|
50 |
Symmetrical SP3T
|
+V & -V
|
MSW3103_3104-310.pdf
|
Wide frequency range: 50 MHz to 3 GHz, in 2 bands
High RF peak power: 500 W Higher average power handling than plastic packaged MMIC switches: 100 W CW Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H Low Insertion loss: 0.5 dB High IIP3: 65 dBm Operates from positive voltage: +5 V & -28 V to -125 V RoHS compliant |
Yes
|
8 mm L x 8 mm W x 2.5 mm H
|
Plastic Surface Mount
|
SP3T.PNG
|
1.5:1
|
||||||||||||||||||||||
| MSW3200-320 | Inquire |
Surface Mount PIN Diode SP3T Switches
|
20 | 1000 | 0.4 | 47 | 65 |
No
|
50 |
Symmetrical SP3T
|
+V & -V
|
MSW320x-320.pdf
|
Surface Mount SP3T Switch in Compact Outline: 8mm L x 8mm W x 2.5 mm H
Higher Voltage > 1,000 Volts for Higher RF Peak Power (500 W) Higher Average Power Handling than Plastic (100 W C.W.) Faster Switching Speed (1 µS) Lower Insertion Loss (0.5 dB) & Higher IIP3 (65 dBm) Operates From +5 V & -180 V for Higher Linearity RoHS Compliant |
Yes
|
8mm L x 8mm W x 2.5 mm H
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Plastic Surface Mount
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SP3T.PNG
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1.2:1
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| MSW3201-320 | Inquire |
Surface Mount PIN Diode SP3T Switches
|
400 | 4000 | 0.6 | 35 | 65 |
No
|
50 |
Symmetrical SP3T
|
+V & -V
|
MSW320x-320.pdf
|
Surface Mount SP3T Switch in Compact Outline: 8mm L x 8mm W x 2.5 mm H
Lower Insertion Loss (0.5 dB) & Higher IIP3 (65 dBm) Higher Voltage > 1,000 Volts for Higher RF Peak Power (500 W) Higher Average Power Handling than Plastic (100 W C.W.) Faster Switching Speed (1 µS) Operates From +5 V & -180 V for Higher Linearity RoHS Compliant |
Yes
|
8mm L x 8mm W x 2.5 mm H
|
Plastic Surface Mount
|
SP3T.PNG
|
1.4:1
|
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| MSW3104-310 | Inquire |
Surface Mount SP3T Switches
|
400 | 3000 | 0.6 | 34 | 64 |
No
|
50 |
Symmetrical SP3T
|
+V & -V
|
MSW3103_3104-310.pdf
|
Wide frequency range: 50 MHz to 3 GHz, in 2 bands
High RF peak power: 500 W Higher average power handling than plastic packaged MMIC switches: 100 W CW Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H Low Insertion loss: 0.5 dB Operates from positive voltage: +5 V & -28 V to -125 V High IIP3: 65 dBm RoHS compliant |
Yes
|
8 mm L x 8 mm W x 2.5 mm H
|
Plastic Surface Mount
|
SP3T.PNG
|
1.5:1
|
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| MASW-011029 | Inquire |
Wideband, 75 - 100 GHz, AlGaAs SP3T PIN Diode Switch with integrated bias circuits
|
75000 | 100000 | 1.3 | 33 |
No
|
5386108331001
|
MASW-011029.pdf
|
Yes
|
Die
|
Die
|
MACOM Gen.png
|
Yes
|
