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At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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| topOrder | releaseDate | Part Number | Ordering | Short Description | Compatible Parts | Min Frequency (MHz) | Max Frequency (MHz) | Insertion Loss (dB) | Isolation (dB) | IIP3 (dBm) | CW Incident Power (W) | 75 Ohm | Package Category | Package | ROHS | Lead-Free | Datasheet | Model Data (Sparameters) | Application Notes | Configuration | Driver | Features | Marking | Lead Finish | Product Image | Brightcove Video | DC Power | VSWR | Additional Resources |
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| 999 | 2014/03/31 | MASW-011053 | Inquire |
HMIC Silicon PIN Diode SP3T Switch
|
MADR-009190-000100
|
2000 | 18000 | 0.8 | 50 | 48 | 2 |
No
|
Die/Bumped Die
|
DIE
|
Yes
|
Yes
|
MASW-011053.pdf
|
MASW_011053_S-Parameters.zip
MASW_011053_S2P.zip |
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches List of recommended Drivers for MACOM Switches.pdf |
SP3T
|
Broad Bandwidth Specified up to 18 GHz
Fully Monolithic
Low Insertion Loss / High Isolation
Integrated Bias Network
Usable up to 26 GHz
RoHS Compliant* and 260°C Reflow Compatible
Glass Encapsulate Construction
|
MASW-011053.jpg
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|||||||
| 999 | 2009/12/03 | MASW-007074-000100 | Buy |
GaAs SP3T Absorptive Switch with ASIC Driver, DC-3.0 GHz
|
0 | 3000 | 2 | 32 | 45 |
No
|
Plastic Surface Mount
|
SOW24
|
Yes
|
Yes
|
MASW-007074.pdf
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components M538 - Surfacing Mounting Instructions - Footprint Guidelines S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
Typical Isolation: 32 dB (2,000 MHz)
Typical Insertion Loss: 2.0 dB (2,000 MHz)
Integral ASIC TTL/CMOS Driver
Low DC Power Consumption
50 Ohm Nominal Impedance
Tape and Reel Packaging Available
Test Boards Available
Lead-Free SOW-24 Package
100% Matte Tin Plating over Copper
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
RoHS* Compliant Version of SW65-0214
|
MACOM_general.png
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|||||||||
| 999 | 2005/11/11 | MASWSS0200 | Buy |
GaAs CDMA-GPS
|
500 | 2500 | 0.6 | 24 | 61 |
No
|
Plastic Surface Mount
|
3mm PQFN-12LD
|
Yes
|
Yes
|
MASWSS0200.pdf
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
Balanced (symmetrical) RF Ports
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
100% Matte Tin Plating over Copper
Lead-Free 3 mm 12-Lead PQFN Package
0.5 Micron GaAs pHEMT Process
High Isolation: 21 dB at 2 GHz
Low Insertion Loss: 0.55 dB at 1 GHz
Low Cross Modulation
RoHS* Compliant Version of MASWSS0060
|
78
|
100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
|
3x3mm PQFN 12-lead.jpg
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|||||||
| 999 | 2005/08/14 | MASWSS0144 | Buy |
GaAs CDMA-GPS
|
500 | 3000 | 0.6 | 24 | 55 |
No
|
Plastic Surface Mount
|
3mm PQFN-12LD
|
Yes
|
Yes
|
MASWSS0144.pdf
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
CDMA Handset Switching Applications
RoHS* Compliant
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
Lead-Free 2 mm 12-Lead STQFN with 0.4 mm lead pitch package
0.5 micron GaAs pHEMT Process
High Power: P0.1dB = 36 dBm @ 1 GHz
High Isolation: 27 dB @ 1 GHz
Low Insertion Loss: 0.55 dB @ 1 GHz
Low Cross Modulation
Balanced (symmetrical) RF Ports
|
2x2mm STQFN 12-lead.jpg
|
|||||||||
| 999 | 2005/02/11 | MASWSS0199 | Buy |
GaAs CDMA-GPS
|
0 | 2500 | 0.5 | 30 | 58 |
No
|
Plastic Surface Mount
|
3mm PQFN-12LD
|
Yes
|
Yes
|
MASWSS0199.pdf
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
Unbalanced (asymmetric) RF Paths
RoHS* Compliant Version of MASWSS0065
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
100% Matte Tin Plating over Copper
Lead-Free 3 mm 12-lead PQFN Package
0.5 micron GaAs pHEMT Process
High Isolation: 20 dB at 2.0 GHz
Low Insertion Loss: 0.5 dB at 1.0 GHz
Low Cross Modulation
|
3x3mm PQFN 12-lead.jpg
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|||||||||
| 999 | 2003/03/07 | MA4AGSW3 | Buy |
AlGaAs Reflective
|
MADR-009190-000100
MADR-011022 |
50 | 50000 | 0.6 | 48 | 40 | 0 |
No
|
Die
|
DIE
|
Yes
|
Yes
|
MA4AGSW3.pdf
|
MA4AGSW3_SPAR.zip
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches AN3021 - PIN Diodes for Microwave Switch Designs List of recommended Drivers for MACOM Switches.pdf |
SP3T
|
Without
|
Ultra Broad Bandwidth : 50 MHz to 50 GHz
RoHS Compliant*
260°C Reflow Compatible
Polymer Scratch Protection
Silicon Nitride Passivation
M/ACOM’s unique AlGaAs Hetero-Jjunction Anode Technology
+10mA for Isolation state
-10mA for low loss state
Low Current consumption
31 dB Isolation at 50 GHz
0.8 dB Insertion Loss
Functional Bandwidth : 50 MHz to 70 GHz
|
MACOM_general.png
|
3203639713001
|
|||||
| 999 | 2000/10/09 | MA4SW310B-1 | Buy |
HMIC PIN Diode with Bias
|
MADR-009190-000100
MADR-011020 |
2000 | 26000 | 1.2 | 47 | 40 | 2 |
No
|
Die/Bumped Die
|
DIE
|
Yes
|
Yes
|
MA4SW310B-1.pdf
|
MA4SW310B-1_SPAR.zip
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches AN3021 - PIN Diodes for Microwave Switch Designs List of recommended Drivers for MACOM Switches.pdf |
SP3T
|
Without
|
Broad Bandwidth Specified 2 to 18 GHz
RoHS Compliant
Polymer Protective Coating
Glass Encapsulate
Fully Monolithic Construction
Integrated Bias Network
Usable up to 26 GHz
Low Insertion Loss / High Isolation
|
MACOM_general.png
|
||||||
| 999 | 2000/07/19 | MA4SW310 | Buy |
HMIC™ PIN Diode
|
MADR-009190-000100
MADR-011020 |
50 | 26500 | 0.8 | 48 | 40 | 2 |
No
|
Die/Bumped Die
|
DIE
|
Yes
|
Yes
|
MA4SW310.pdf
|
MA4SW310_spar.zip
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches AN3021 - PIN Diodes for Microwave Switch Designs List of recommended Drivers for MACOM Switches.pdf |
SP3T
|
Without
|
Broad Bandwidth
50 nS Switching Speed
Up to +30dBm C.W. Power Handling @ +25°C
Glass Encapsulated Chip with Polymer Protective Coating
Rugged Design Fully Monolithic
Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs
Usable from 50 MHz to 26.5 GHz
Specified from 50 MHz to 20 GHz
|
DIE MA4SW310.JPG
|
||||||
| 999 | MASW-003100-1192 | Buy |
HMIC™ PIN Diode
|
MADR-009190-000100
MADR-011020 |
50 | 26500 | 0.3 | 65 | 40 | 2 |
No
|
Die/Bumped Die
|
DIE
|
Yes
|
Yes
|
MASW-003100.pdf
|
MASW-003100_SPAR (2).zip
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches List of recommended Drivers for MACOM Switches.pdf |
SP3T
|
Without
|
Broad Bandwidth
RoHS Compliant
Up to +33dBm C.W. Power Handling
Glass Encapsulated Construction
Fully Monolithic
Rugged
Lower Insertion Loss / Higher Isolation than pHempt
Usable from 50MHz to 26.5GHz
Specified from 50MHz to 20GHz
|
MACOM_general.png
|
|||||||
| 999 | MASW-003103-1364 | Buy |
HMIC™ Si PIN Diode
|
MADR-009190-000100
|
50 | 20000 | 0.8 | 40 | 40 | 6 |
No
|
Surface Mount Die
|
Surmount Die
|
Yes
|
Yes
|
MASW-003103-1364.pdf
|
MASW-003103-1364.zip
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M541 - Bonding, Handling, and Mounting Procedures for Chip Diode Devices AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches List of recommended Drivers for MACOM Switches.pdf |
SP3T
|
Without
|
Specified from 50 MHz to 20 GHz
Polymer Scratch Protection
Silicon Nitride Passivation
Up to +38 dBm C.W. Power Handling1 @ +25°C
Glass Encapsulated Construction
Rugged, Fully Monolithic
RoHS Compliant Surmount™ Package
Low Parasitic Capacitance and Inductance
High Isolation
Low Insertion Loss
Usable up to 26 GHz
|
MACOM_general.png
|
4487668663001
|
MASW_003103_PCB_AND_FOOTPRINT.zip
|
|||||
| 999 | MASW-003102-13590 | Buy |
HMIC™ Si PIN Diode with Bias
|
MADR-009190-000100
|
2000 | 18000 | 0.8 | 50 | 40 | 2 |
No
|
Die/Bumped Die
|
DIE
|
Yes
|
Yes
|
MASW-00x102 Series.pdf
|
MASW-003102_SPAR.zip
|
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification M513 - Tape and Reel Packaging for Surface Mount Components M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches List of recommended Drivers for MACOM Switches.pdf |
SP3T
|
Without
|
Broad Bandwidth Specified up to 18 GHz
RoHS* Compliant
260°C Reflow Compatible
Glass Encapsulate Construction
Fully Monolithic
Low Insertion Loss / High Isolation
Integrated Bias Network
Usable up to 26 GHz
Rugged
|
MACOM_general.png
|
|||||||
| 999 | MASW-010612 | Inquire |
GaAs SP3T Switch
|
0 | 3500 | 0.6 | 21 | 54 |
No
|
Plastic Surface Mount
|
1.5mm PDFN-8LD
|
Yes
|
Yes
|
MASW-010612.pdf
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
Low Insertion Loss: 0.6 dB
RoHS* Compliant
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
Lead-Free 1.5 mm 8-Lead PDFN Package
1.8 V Operation with 1.8 V on Voltage Pull Up
Fast Settling Speed for timing-sensitive applications
0.5 micron GaAs pHEMT Process
High P1dB: 36 dBm
|
1.5 mm_8-lead PQFN.jpg
|
||||||||||
| 999 | MASW-011030 | Buy |
High Power SP3T 100W Reflective Switch
|
MADR-010574
MASW-011030 |
30 | 3000 | 0.2 | 50 | 62 | 100 |
No
|
Plastic Surface Mount
|
7 mm 16-lead HQFN Package
|
Yes
|
Yes
|
MASW-011030.pdf
|
MASW-011030_Spar_ext_bias_tees.zip
|
List of recommended Drivers for MACOM Switches.pdf
|
SP3T
|
Without
|
Power Handling: 100 W @ 85°C
Insertion Loss: 0.35 dB @ 2 GHz
Isolation: 40 dB @ 2 GHz
Surface Mount 7 mm 16-lead HQFN Package
Suitable for High Power Military and Civilian Radio Applications
RoHS* Compliant and 260°C Reflow Compatible
Class 1B HBM ESD Rating
|
Product Image - MASW-011030.jpg
|
4358709035001
|
||||||
| 999 | MASW-011041 | Buy |
Switch, SP3T 200 W
|
MADR-010574
|
50 | 1000 | 0.3 | 51 | 200 |
No
|
9 mm 20-Lead HQFN
|
9 mm HQFN 20-lead Package
|
Yes
|
Yes
|
MASW-011041 (2).pdf
|
List of recommended Drivers for MACOM Switches.pdf
|
SP3T
|
Without
|
200 W CW Incident Power @ +85°C
Operates from +V DC Bias Only
Harmonics: <-70 dBc
High Isolation: >40 dB
Low Insertion Loss: <0.5 dB
Halogen-Free “Green” Mold Compound
Lead-Free 9 mm HQFN 20-lead Package
RoHS* Compliant and 260°C Reflow Compatible
|
||||||||||
| 999 | MASW-008955 | Buy |
GaAs
|
0 | 3000 | 0.5 | 22 | 54 |
No
|
Plastic Surface Mount
|
2mm PDFN-8LD
|
Yes
|
Yes
|
MASW-008955.pdf
|
MASW_008955_SParameters.zip
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
Low Insertion Loss: 0.55 dB @ 2.45 GHz
1.8 V Operation with 1.8 V on Voltage Pull Up
Low gate lag for timing sensitive applications
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
Lead-Free 2 mm 8-Lead PDFN Package
0.5 micron GaAs pHEMT Process
High P1dB: 35 dBm @ 2.6 V
|
2mm 8-lead_new logo.jpg
|
|||||||||
| 999 | MASW-008330 | Buy |
GaAs SP3T 2.5 V Switch DC - 3.0 GHz
|
500 | 3000 | 0.3 | 24 | 50 |
No
|
Plastic Surface Mount
|
2mm PDFN-8LD
|
Yes
|
Yes
|
MASW-008330.pdf
|
MASW-008330_Spars_boardLoss_De-embedded.zip
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
Low Voltage Operation: 2.5V
RoHS* Compliant version of MASWSS0028
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
100% Matte Tin Plating over Copper
Lead-Free 2 mm 8-Lead PDFN Package
0.5 micron GaAs PHEMT Process
Low Insertion Loss: 0.3 dB at 1 GHz
|
2mm 8-lead_new logo.jpg
|
|||||||||
| 999 | MASW-009482 | Buy |
GaAs
|
50 | 4000 | 0.7 | 23 | 65 |
No
|
Plastic Surface Mount
|
2mm STQFN-12LD
|
Yes
|
Yes
|
MASW-009482.pdf
|
masw-009482_s4p_deembedded.zip
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
CDMA Handset Switching Applications
RoHS* Compliant
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
Lead-Free 2 mm 12-Lead STQFN Package with 0.5 mm Lead Pitch
0.5 micron GaAs pHEMT Process
High Power: P0.1dB = 36 dBm @ 1 GHz
High Isolation: 27 dB @ 1 GHz
Low Insertion Loss: 0.55 dB @ 1 GHz
Low Cross Modulation
Balanced (symmetrical) RF Ports
|
30
|
100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
|
2x2mm STQFN 12-lead.jpg
|
|||||||
| 999 | MASWSS0191 | Buy |
GaAs
|
500 | 3000 | 0.7 | 30 | 58 |
No
|
Plastic Surface Mount
|
2mm STDFN-8LD
|
Yes
|
MASWSS0191.pdf
|
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices S2083 - Surface Mounting Instructions for PQFN Packages AN3007 - ESD/EOS Protection for GaAs MMIC Switches AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches S2079 - Drivers for GaAs FET Switches and Digital Attenuators AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches |
SP3T
|
Without
|
Optimized RF Paths
100% Matte Tin Plating over Copper
Lead-Free 2 mm 8-lead STDFN Package
0.5 micron GaAs pHEMT Process
High Isolation: 21.5 dB at 1.9 GHz (PCS)
Low Insertion Loss: 0.7 dB at 820 MHz (Cell)
Low Cross Modulation
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
RoHS* Compliant
|
2x2mm_8-lead.jpg
|
|||||||||||
| 999 | MSW3101-310 | Buy |
Surface Mount SP3T Switches
|
MADR-009150
MADR-010574 |
400 | 4000 | 0.5 | 43 | 65 | 50 |
No
|
Plastic Surface Mount
|
8 mm L x 8 mm W x 2.5 mm H
|
Yes
|
Yes
|
MSW310x-310.pdf
|
List of recommended Drivers for MACOM Switches.pdf
|
Symmetrical SP3T
|
Without
|
Wide frequency range: 50 MHz to 4 GHz, in 2 bands
Higher average power handling than plastic packaged MMIC switches: 158 W C
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
High RF peak power: 500 W
High IIP3: 65 dBm
Low Insertion loss: 0.45 dB
RoHS compliant
Operates from positive voltage: +5 V & +28 V to +125 V
|
SP3T.PNG
|
+V Only
|
1.4:1
|
||||||
| 999 | MSW3100-310 | Inquire |
Surface Mount SP3T Switches
|
MADR-009150
MADR-010574 |
50 | 1000 | 0.3 | 57 | 65 | 50 |
No
|
Plastic Surface Mount
|
8 mm L x 8 mm W x 2.5 mm H
|
Yes
|
Yes
|
MSW310x-310.pdf
|
List of recommended Drivers for MACOM Switches.pdf
|
Symmetrical SP3T
|
Without
|
Wide frequency range: 50 MHz to 4 GHz, in 2 bands
Higher average power handling than plastic packaged MMIC switches: 158 W CW
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
Low Insertion loss: 0.45 dB
High RF peak power: 500 W
High IIP3: 65 dBm
Operates from positive voltage: +5 V & +28 V to +125 V
RoHS Compliant
|
SP3T.PNG
|
+V Only
|
1.2:1
|
||||||
| 999 | MSW3103-310 | Inquire |
Surface Mount SP3T Switches
|
MADR-009150
MADR-010574 |
50 | 1000 | 0.4 | 34 | 64 | 50 |
No
|
Plastic Surface Mount
|
8 mm L x 8 mm W x 2.5 mm H
|
No
|
Yes
|
MSW3103_3104-310.pdf
|
List of recommended Drivers for MACOM Switches.pdf
|
Symmetrical SP3T
|
Without
|
Wide frequency range: 50 MHz to 3 GHz, in 2 bands
High RF peak power: 500 W
Higher average power handling than plastic packaged MMIC switches: 100 W CW
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
Low Insertion loss: 0.5 dB
High IIP3: 65 dBm
Operates from positive voltage: +5 V & -28 V to -125 V
RoHS compliant
|
SP3T.PNG
|
+V & -V
|
1.5:1
|
||||||
| 999 | MSW3200-320 | Inquire |
Surface Mount PIN Diode SP3T Switches
|
MADR-009150
MADR-010574 |
20 | 1000 | 0.4 | 47 | 65 | 50 |
No
|
Plastic Surface Mount
|
8mm L x 8mm W x 2.5 mm H
|
Yes
|
Yes
|
MSW320x-320.pdf
|
List of recommended Drivers for MACOM Switches.pdf
|
Symmetrical SP3T
|
Without
|
Surface Mount SP3T Switch in Compact Outline: 8mm L x 8mm W x 2.5 mm H
Higher Voltage > 1,000 Volts for Higher RF Peak Power (500 W)
Higher Average Power Handling than Plastic (100 W C.W.)
Faster Switching Speed (1 µS)
Lower Insertion Loss (0.5 dB) & Higher IIP3 (65 dBm)
Operates From +5 V & -180 V for Higher Linearity
RoHS Compliant
|
SP3T.PNG
|
+V & -V
|
1.2:1
|
||||||
| 999 | MSW3201-320 | Inquire |
Surface Mount PIN Diode SP3T Switches
|
MADR-009150
MADR-010574 |
400 | 4000 | 0.6 | 35 | 65 | 50 |
No
|
Plastic Surface Mount
|
8mm L x 8mm W x 2.5 mm H
|
Yes
|
Yes
|
MSW320x-320.pdf
|
List of recommended Drivers for MACOM Switches.pdf
|
Symmetrical SP3T
|
Without
|
Surface Mount SP3T Switch in Compact Outline: 8mm L x 8mm W x 2.5 mm H
Lower Insertion Loss (0.5 dB) & Higher IIP3 (65 dBm)
Higher Voltage > 1,000 Volts for Higher RF Peak Power (500 W)
Higher Average Power Handling than Plastic (100 W C.W.)
Faster Switching Speed (1 µS)
Operates From +5 V & -180 V for Higher Linearity
RoHS Compliant
|
SP3T.PNG
|
+V & -V
|
1.4:1
|
||||||
| 999 | MSW3104-310 | Inquire |
Surface Mount SP3T Switches
|
MADR-009150
MADR-010574 |
400 | 3000 | 0.6 | 34 | 64 | 50 |
No
|
Plastic Surface Mount
|
8 mm L x 8 mm W x 2.5 mm H
|
Yes
|
Yes
|
MSW3103_3104-310.pdf
|
List of recommended Drivers for MACOM Switches.pdf
|
Symmetrical SP3T
|
Without
|
Wide frequency range: 50 MHz to 3 GHz, in 2 bands
High RF peak power: 500 W
Higher average power handling than plastic packaged MMIC switches: 100 W CW
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
Low Insertion loss: 0.5 dB
Operates from positive voltage: +5 V & -28 V to -125 V
High IIP3: 65 dBm
RoHS compliant
|
SP3T.PNG
|
+V & -V
|
1.5:1
|
||||||
| 999 | 2017/04/03 | MASW-011029 | Buy |
Wideband, 75 - 100 GHz, AlGaAs SP3T PIN Diode Switch with integrated bias circuits
|
MADR-009190-000100
|
75000 | 100000 | 1.3 | 33 |
No
|
Die
|
Die
|
Yes
|
Yes
|
MASW-011029.pdf
|
List of recommended Drivers for MACOM Switches.pdf
|
SP3T
|
Without
|
MACOM Gen.png
|
5386108331001
|
|||||||||
| 999 | 2021/06/29 | MASW-011130-DIE | Inquire |
AlGaAs SP3T Switch with Integrated Bias Network 2 - 22 GHz
|
2000 | 22000 | 1 | 35 | 45 |
No
|
1.86 x 1.86 mm
|
DIE
|
Yes
|
Yes
|
MASW-011130-DIE.pdf
|
SP3T
|
Broad Bandwidth Specified up to 22 GHz
Integrated DC Blocks and RF Bias Networks
Low Insertion Loss / High Isolation
Fast Switching Speed
Fully Monolithic
Die Size: 1.86 x 1.86 mm
RoHS* Compliant
Low Current Consumption: -10 mA for Low Loss State, +10 mA for Isolation State
|
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