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MACOM’s Distributed Feedback (DFB) laser diodes are designed for direct modulation uncooled operation up to 2.5G. These products utilize patented Etched Facet Technology (EFT) for exceptional reliability with the below benefits:
- EFT Technology enabling high performance and product uniformity
- Non-hermetic packaging ideal for Silicon Photonics based Data Center applications
- Monolithic surface emission and beam shaping for alignment with Silicon Photonics
- No isolator required due to high back-reflection rejection
Products are RoHS compliant, designed for Telcordia GR-468 and available either as tested dies on blue tape or packaged TO-56 can.
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| releaseDate | Part Number | Ordering | Short Description | Max Data Rate (Gbps) | Wavelength (nm) | Package Size | Package Type | Benefits | Features | Product Image | Datasheet | Temp Options |
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| 131D-02E-VT5MB-502 | Inquire |
TO, laser, 2.5G DFB NFF, 2mm Ball Lens (6.7mm FL), Pinout Type B
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2.5 | 1310 |
TO-56
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Design for non-hermetic package
High reliability |
1310 nm wavelength
Design for Telcordia GR-468 RoHS compliant Edge emitting laser (EEL) Uncooled operation, -20 to 85°C Narrow Farfield (NFF) Direct modulation up to 2.5 Gbps |
131D-02E-VT5xB-502.pdf
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-20º to 85º
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| 131D-02E-VT5TB-50x | Inquire |
TO, laser, 2.5G DFB NFF, 2mm Ball Lens (6.6mm FL), Pinout Type B
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2.5 | 1310 |
TO-56
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Design for non-hermetic package
High reliability |
1310 nm wavelength
Edge emitting laser (EEL) Uncooled operation, -20º to 85°C Narrow Farfield (NFF Direct modulation up to 2.5 Gbps Design for Telcordia GR-468 RoHS compliant |
131D-02E-VT5xB-502.pdf
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-20º to 85º
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| 131D-02E-VCT11-50x | Inquire |
Die, laser, 2.5G DFB NFF, small size, chip on tape
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2.5 | 1310 |
265 x 250 x 100um
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Die
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High fiber coupling efficiency
On-wafer mapping/screening Design for non-hermetic package 100% tested over temperature |
Small size die: 265 x 250 x 100um
Design for Telcordia-GR468 RoHS compliant Edge emitting laser (EEL) Uncooled operation, -20 to 85°C Direct modulation up to 2.5Gbps Narrow beam divergence angle (NFF) 1310nm wavelength |
131D-02E-VCT11-500.pdf
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-20º to 85º
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| 2017/09/04 | 127D-02I-VT5AB | Inquire |
1270 nm Edge Emitting Narrow Farfield DFB Laser
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2.5 | 1270 |
Aspherical lens cap (FL=7.5mm) in hermetic TO-56 package
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TO-56
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Directly modulated 2.5 Gbps 1270 nm DFB Narrow Farfield (NFF) laser diode chips
Available with aspherical lens cap (FL=7.5 mm) in hermetic TO-56 package, integrated InGaAs monitoring photodiode and Type B pinout (common anode) |
Inquire |
-40º to 85ºC
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| 2015/03/30 | 131D-02I-LCT11-07 | Inquire |
2.5G 1310nm DFB Std LD
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2.5 | 1310 |
300 x 250 x 100
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Die
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Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
1310nm wavelength
Direct modulation up to 10Gbps Uncooled operation Edge emitting laser (EEL) RoHS compliant and Design for Telcordia-GR468 |
131D-02x-Lxx11.png
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Inquire |
-40º to 85ºC
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| 2015/03/30 | 131D-02I-LT5MB | Inquire |
2.5G 1310nm DFB Standard (Std) TO-Can
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2.5 | 1310 |
TO-56
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TO-Can
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Hermetic Package
High reliability |
1310 nm wavelength
Direct modultation up to 2.5Gbps Uncooled operation, -40°C to 85°C operating temp range Edge emitting laser (EEL) RoHS compliant and Design for Telcordia GR-468 TO-56 package with lens options |
TOCAN.png
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131D-02I-LT5MB.pdf
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-40º to 85ºC
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| 2017/12/28 | 127D-02x-VCT11 | Inquire |
1270nm Edge Emitting Narrow Farfield DFB Laser
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2.5 | 1270 |
265 x 250 x 100um die
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Bare Die
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127D-02x-Vxx11_Rev1.pdf
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-40°C to 95°C
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