10G Distributed Feedback Lasers

MACOM’s Distributed Feedback (DFB) laser diodes are designed for direct modulation uncooled operation up to10G. These products utilize patented Etched Facet Technology (EFT) for exceptional reliability with the below benefits:

EFT Technology enabling high performance and product uniformity
Non-hermetic packaging ideal for Silicon Photonics based Data Center applications
Monolithic surface emission and beam shaping for alignment with Silicon Photonics
No isolator required due to high back-reflection rejection

Products are RoHS compliant, designed for Telcordia GR-468 and available either as tested dies on blue tape or packaged TO-56 can.

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topOrder	releaseDate	Part Number	Ordering	Short Description	Max Data Rate (Gbps)	Temp Options	Wavelength (nm)	Package Type	Package Size	Datasheet	Features	Benefits

999	2017/09/04	127D-10I-LT5CC	Inquire	1270 nm Edge Emitting DFB Laser	10	-40⁰ to 85⁰C	1270	TO-Can	TO-56	Inquire	Available in hermetic TO-56 package with aspherical lens (10.1 mm focal length), and co-packaged InGaAs monitoring photodiode Directly modulated 10 Gbps Distributed Feedback (DFB) laser diode device at 1270 nm
999		127D-10I-VCT11-504	Inquire	10Gbps DFB laser diode chips with 1270nm wavelength	10	–40°C to +95°C	1270	Die	250um x 250um x 100um	Inquire	1270/1290/1310/1330±10nm tolerant Direct modulation up to 10Gbps Uncooled operation, operating temp options from –40°C to +95°C Edge emitting laser (EEL) RoHS compliant and Design for Telcordia GR-468	Design for non-hermetic package On-wafer mapping/screening 100% tested over temperature

10G Distributed Feedback Lasers

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