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LinkedIn25G Distributed Feedback Lasers
MACOM’s Distributed Feedback (DFB) laser diodes are designed for direct modulation uncooled operation up to 25G. These products utilize patented Etched Facet Technology (EFT) for exceptional reliability with the below benefits:
- EFT Technology enabling high performance and product uniformity
- Non-hermetic packaging ideal for Silicon Photonics based Data Center applications
- Monolithic surface emission and beam shaping for alignment with Silicon Photonics
- No isolator required due to high back-reflection rejection
Products are RoHS compliant, designed for Telcordia GR-468 and available either as tested dies on blue tape or packaged TO-56 can.
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| 2017/01/09 | 131D-25I-LT5TC | Inquire |
1310nm Edge Emitting DFB Laser in TO-56 Package 25 Gbps
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5.6 mm diameter
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25 |
TO-56
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-40º to 85ºC
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1310 |
131D-25x-LT5xC.pdf
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TO-Can C_transparent.png
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| 127D-25G-Lxx11 | Inquire |
25Gbps CWDM distributed feedback (DFB) laser diode chips
|
250 x 250 x 100 μm
|
25 |
Die
|
-5º to 85ºC
|
1271 |
1xxD-25G-Lxx11.pdf
|
Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
CWDM wavelength
Direct modulation up to 25Gbps
Uncooled operation, -5°C to +85°C
Edge emitting laser (EEL)
RoHS compliant
|
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| 129D-25G-Lxx11 | Inquire |
25Gbps CWDM distributed feedback (DFB) laser diode chips
|
250 x 250 x 100 μm
|
25 |
Die
|
-5º to 85ºC
|
1291 |
1xxD-25G-Lxx11.pdf
|
Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
CWDM wavelength
Direct modulation up to 25Gbps
Uncooled operation, -5°C to +85°C
Edge emitting laser (EEL)
RoHS compliant
|
|||
| 131D-25G-Lxx11 | Inquire |
25Gbps CWDM distributed feedback (DFB) laser diode chips
|
250 x 250 x 100 μm
|
25 |
Die
|
-5º to 85ºC
|
1311 |
1xxD-25G-Lxx11.pdf
|
Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
CWDM wavelength
Direct modulation up to 25Gbps
Uncooled operation, -5°C to +85°C
Edge emitting laser (EEL)
RoHS compliant
|
|||
| 133D-25G-Lxx11 | Inquire |
25Gbps CWDM distributed feedback (DFB) laser diode chips
|
250 x 250 x 100 μm
|
25 |
Die
|
-5º to 85ºC
|
1331 |
1xxD-25G-Lxx11.pdf
|
Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
CWDM wavelength
Direct modulation up to 25Gbps
Uncooled operation, -5°C to +85°C
Edge emitting laser (EEL)
RoHS compliant
|
|||
| 1295-25B-Lxx11-S3 | Inquire |
25Gbps DFB distributed feedback (DFB) laser diode chips
|
250 x 250 x 100 μm
|
25 |
Die
|
1295.56 | Inquire |
Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
100GBASE-LR4 wavelength at 50°C typ.
Direct modulation up to 25/28Gbps
Edge emitting laser (EEL)
RoHS compliant
|
||||
| 1300-25B-Lxx11-S3 | Inquire |
25Gbps DFB distributed feedback (DFB) laser diode chips
|
250 x 250 x 100 μm
|
25 |
Die
|
1300.05 | Inquire |
Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
100GBASE-LR4 wavelength at 50°C typ.
Direct modulation up to 25/28Gbps
Edge emitting laser (EEL)
RoHS compliant
|
||||
| 1304-25B-Lxx11-S3 | Inquire |
25Gbps DFB distributed feedback (DFB) laser diode chips
|
250 x 250 x 100 μm
|
25 |
Die
|
1304.58 | Inquire |
Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
100GBASE-LR4 wavelength at 50°C typ.
Direct modulation up to 25/28Gbps
Edge emitting laser (EEL)
RoHS compliant
|
||||
| 1309-25B-Lxx11-S3 | Inquire |
25Gbps DFB distributed feedback (DFB) laser diode chips
|
250 x 250 x 100 μm
|
25 |
Die
|
1309.14 | Inquire |
Design for non-hermetic package
On-wafer mapping/screening 100% tested over temperature |
100GBASE-LR4 wavelength at 50°C typ.
Direct modulation up to 25/28Gbps
Edge emitting laser (EEL)
RoHS compliant
|
