Product Detail

GaN Amplifier 50 V, 17 W AVG, 3.4 - 3.8 GHz

 The MAGB-103438-170S0S is a symmetrical GaN HEMT D-mode amplifier pair designed for Doherty base station applications with 17 W average power and optimized for 3.4 - 3.8 GHz modulated signal operation. This device supports pulsed, and linear operation at VDS = 50 V with peak output power levels up to 170 W (52.3 dBm) in an air cavity ceramic package. 

  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant
  • cellular Basestation
  • Max Frequency: 3.8 GHz
  • Min Frequency: 3.4 GHz
  • Supply Voltage: 50 V
  • P3dB : 170 W
  • Power Gain: 12.5 dB
  • Efficiency: 40 %
  • AC-780S-4
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
GaN, Amplifier, GaN, 3.4-3.8 GHz, AC-780-4
AC780BM-F4 Inquire

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