Product Detail

GaN Amplifier 50 V, 50 W 3.4 - 4.0 GHz

The MAPC-A2002 is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for base station applications and optimized for 3.4 - 4.0 GHz modulated signal operation. The device supports pulsed and linear operation with peak output power levels to 50 W (47 dBm) in a 7.0 x 6.5 mm DFN package.

Features
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • Compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040
  • 100 % RF Tested
  • RoHS* Compliant
Applications
  • Cellular Base Station Applications
Specifications
  • Min Frequency: 3.4 MHz
  • Max Frequency: 4 MHz
  • Supply Voltage: 50 V
  • PSAT: 50 W
  • Gain: 16.2 dB
  • Test Freq: 3.85 GHz
Datasheet
Package
  • 7.0 x 6.5 mm DFN
Package Category
  • 7mm PQFN-48LD
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MAPC-A2002-AD000
Amplifier, 3.4-4.0 GHz, GaN-SiC, DFN 7x6.5
6.5X7MM PDFN-6LD Inquire
MAPC-A2002-ADSB1
Sample Board, MAPC-A2002
Fixture Inquire
MAPC-A2002-ADTR1
Amplifier, T&R, 3.4-4GHz, GaN-SiC, DFN 7x6.5
6.5x7mm PDFN-6LD Inquire

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