MAPC-A2002

GaN Amplifier 50 V, 50 W 3.4 - 4.0 GHz

The MAPC-A2002 is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for base station applications and optimized for 3.4 - 4.0 GHz modulated signal operation. The device supports pulsed and linear operation with peak output power levels to 50 W (47 dBm) in a 7.0 x 6.5 mm DFN package.

Product Specifications

Part Number
MAPC-A2002
Short Description
GaN Amplifier 50 V, 50 W 3.4 - 4.0 GHz
Min Frequency(MHz)
3
Max Frequency(MHz)
4
Supply Voltage(V)
50
PSAT(W)
50.0
Gain(dB)
16.2
Efficiency
61
Test Freq(GHz)
3.85
Package
7.0 x 6.5 mm DFN
Package Category
7mm PQFN-48LD

Features

  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • Compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040
  • 100 % RF Tested
  • RoHS* Compliant

Applications

  • Cellular Base Station Applications

Technical Resources

Datasheet


Order from MACOM

MAPC-A2002-AD000
Amplifier,3.4-4.0 GHz,GaN-SiC,DFN 7x6.5
MAPC-A2002-ADSB1
Sample Board, MAPC-A2002
MAPC-A2002-ADTR1
Amplifier,T&R,3.4-4GHz,GaN-SiC,DFN 7x6.5