Product Detail

Silicon Step Recovery Diodes
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.
  • Junction Capacitance, Min: 1.5 pF
  • Junction Capacitance, Max: 2.5 pF
  • Lifetime: 70 ns
  • Reverse Voltage, Min: 50 V
  • Tt: 200 pS
  • Theta (θJC), max: 22 °C/W
  • Frequency Cutoff (FCO), typ.: 200 GHz
Package Category
  • Chip
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Silicon Step Recovery Diodes

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