NPA1006

GaN Amplifier 28 V, 12 W, 0.020 - 1.0 GHz

 The NPA1006 is a GaN on silicon amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. 

Product Specifications

Part Number
NPA1006
Description
GaN Amplifier 28 V, 12 W, 0.020 - 1.0 GHz
Min Frequency(MHz)
20
Max Frequency(MHz)
1000
Gain(dB)
14.0
PSAT(W)
12
Package
6x5mm 8-lead PDFN

Features

  • GaN on Si HEMT D-Mode Amplifier
  • Lead-Free 6 x 5 mm 8-lead PDFN Package
  • 100% RF Tested
  • 65% Drain Efficiency @ 900 MHz
  • 14 dB Gain @ 900 MHz
  • 28 V Operation
  • 50 Ω Input Matched, Output Unmatched
  • Broadband operation from 20 - 1000 MHz
  • Suitable for linear and saturated applications
  • Halogen-Free “Green” Mold Compound
  • RoHS* Compliant

Technical Resources

Datasheet


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NPA1006
Amplifier,PA,28V,12.5W,20-1000MHz
NPA1006 Distributors