Product Detail

GaN on Silicon General Purpose Amplifier, 20 - 1000 MHz, 28 V, 12.5 W

 The NPA1006 is a GaN on silicon amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. 

  • GaN on Si HEMT D-Mode Amplifier
  • Lead-Free 6 x 5 mm 8-lead PDFN Package
  • 100% RF Tested
  • 65% Drain Efficiency @ 900 MHz
  • 14 dB Gain @ 900 MHz
  • 28 V Operation
  • 50 Ω Input Matched, Output Unmatched
  • Broadband operation from 20 - 1000 MHz
  • Suitable for linear and saturated applications
  • Halogen-Free “Green” Mold Compound
  • RoHS* Compliant
  • Defense Communications
  • Wireless Infrastructure
  • Supply Voltage: 28 V
  • PSAT: 12.5 W
  • Gain: 14 dB
  • Test Freq: 0.9 GHz
  • Max Frequency: 1,000 MHz
  • Min Frequency: 20 MHz
  • 6x5mm 8-lead PDFN Package
Package Category
  • PDFN Plastic Package
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Amplifier, PA, 28V, 12.5W, 20-1000MHz
DFN5X6-8 Inquire Buy Buy
Sample Board, NPA-1006
FIXTURE Inquire Buy
Amplifier, PA, 28V, 12.5W, 20-1000MHz, 500pc
5X6MM PDFN-8LD Inquire
Amplifier, SubAsmby, 6X5mmPDFN-8LD, NPA1006
5X6MM PDFN-8LD Inquire

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