NPA1008

GaN Amplifier 28 V, 5 W, 0.020 - 2.7 GHz

 The NPA1008 is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 x 4 mm 24-lead QFN plastic package. The NPA1008 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. 

Product Specifications

Part Number
NPA1008
Short Description
GaN Amplifier 28 V, 5 W, 0.020 - 2.7 GHz
Min Frequency(MHz)
20
Max Frequency(MHz)
2700
Supply Voltage(V)
28
PSAT(W)
5.0
Gain(dB)
12.0
Efficiency
>45
Test Freq(GHz)
1.90
Package
4x4 mm
Package Category
PQFN

Features

  • GaN on Si HEMT D-Mode Integrated Amplifier
  • 100% RF Tested
  • 45% Drain Efficiency
  • 28 V Operation
  • 50 Ω Input Matched
  • Broadband Operation from 20 - 2700 MHz
  • Suitable for linear and saturated applications
  • Halogen-Free “Green” Mold Compound
  • Lead-Free 4 x 4 mm 24-lead PQFN Package
  • RoHS* Compliant

Applications

  • Defense Communications
  • Wireless Infrastructure

Technical Resources

Datasheet


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NPA1008
Amplifier, 5W Integrated Amplifier
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