Product Detail

NPT1010B
Gallium Nitride 28V, 100W General Purpose RF Power Transistor

Gallium Nitride 28V, 100W General Purpose RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology ***Not recommended for new applications, Comparable Part: Please see NPT2022***

Features
  • Optimized for Broadband Operation from DC – 2000MHz
  • 100W P3dB CW Power at 900MHz
  • 60-95 W PSAT CW Power from 500-1000MHz in broadband application design
  • High efficiency from 14 - 28V
  • 1.4 °C/W RTH with Maximum TJ Rating of 200°C
  • Robust up to 10:1 VSWR Mismatch at all Phase Angles with No Damage to the Device
  • Subject to EAR99 Export Control
Specifications
  • Supply Voltage: 28 V
  • PSAT: 100 W
  • Gain: 20 dB
  • Test Freq: 0.9 GHz
  • Theta J-C: 1.4 C/W
Package
  • Flange Ceramic Pkg
Package Category
  • Ceramic
Part Number Package MACOM Richardson RFPD DigiKey Mouser Rell
NPT1010B
Transistor, GaN, DC-2000MHz, 100W
AC360BP-F2
In Stock: 23
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