Product Detail

NPT1012B
GaN Power Transistor, 28 V, 25 W DC - 4 GHz

The NPT1012B GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package.

Features
  • Optimized for Broadband Operation from DC-4000MHz
  • High Efficiency from 14 - 28V
  • 10-20W P3dB CW Power from 30-1000MHz in application board with >50% drain efficiency
  • 16-20W P3dB CW Power from 1000-2500MHz in application board with >45% drain efficiency
  • 25W P3dB CW Power at 3000MHz
  • 4.0 °C/W RTH with Maximum TJ Rating of 200 °C
  • Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 °C flange
  • Subject to EAR99 Export Control
Applications
  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 28 V
  • PSAT: 25 W
  • Gain: 13 dB
  • Test Freq: 3 GHz
  • Min Frequency: 0 MHz
  • Max Frequency: 4,000 MHz
  • Theta J-C: 4 C/W
Package
  • Flange Ceramic Pkg
Package Category
  • Ceramic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPT1012B
28V, 25W, DC-4GHz GaN HEMT
AC200BM-F2
In Stock: 2
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In Stock: 5
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