Product Detail

NPT1015B
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
The NPT1015B GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 45W (46.5 dBm) in an industry standard metal-ceramic package with a bolt down flange. This product has been designed to be reliable, with a low thermal resistance, and rugged, able to withstand extreme mismatch on the input and output with no device damage. For load-pull data and non-linear models, please send an e-mail to applications@macom.com.
Features
  • Suitable for Linear and Saturated Applications
  • Rugged Design Passes 15:1 VSWR test
  • High Drain Efficiency (>55%)
  • Industry Standard Package
  • 28V Operation
  • Tunable from DC-3.5 GHz
  • Reliable with MTTF > 106 at TJ = 200°C
Applications
  • Aerospace and Defense
  • Avionics
  • Defense Communications
  • ISM
  • VHF/UHF/L-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 28 V
  • PSAT: 45 W
  • Gain: 14 dB
  • Test Freq: 2.5 GHz
  • Theta J-C: 2.1 C/W
Package
  • Flange Ceramic Pkg
Package Category
  • Ceramic
Part Number Package MACOM Richardson RFPD DigiKey Mouser Rell
NPT1015B
Transistor, 28V 50W DC-2.5GHz GaN HEMT
AC360BP-F2 Inquire
PT-0006320
Assembly, Transistor, NPT1015B
Inquire

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