Product Detail

NPT2010
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange. For load-pull data and non-linear models, please send an e-mail to applications@macom.com.
Features
  • Suitable for Linear and Saturated Applications
  • High Drain Efficiency (>60%)
  • Industry Standard Package
  • 48V Operation
  • Tunable from DC-2.2 GHz
Applications
  • Aerospace and Defense
  • Avionics
  • Defense Communications
  • ISM
  • VHF/UHF/L-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 48 V
  • PSAT: 100 W
  • Gain: 17 dB
  • Test Freq: 2.1 GHz
  • Theta J-C: 1.7 C/W
Package
  • Flange Ceramic Pkg
Package Category
  • Ceramic
ROHS
  • Yes
Part Number Package MACOM Richardson RFPD DigiKey Mouser Rell
NPT2010
Transistor, 48V 100W DC-2.2GHz HEMT
AC360BP-F2
In Stock: 26
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