Product Detail

NPT2010
GaN on Silicon General Purpose Amplifier, DC - 2.2 GHz, 48 V, 100 W

The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT2010 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. 

Features
  • Suitable for Linear and Saturated Applications
  • High Drain Efficiency (>60%)
  • GaN on Si HEMT D-Mode Amplifier
  • 48V Operation
  • Tunable from DC-2.2 GHz
  • 15 dB Gain @ 2.15 GHz
  • 61% Drain Efficiency @ 2.15 GHz
  • 100% RF Tested
  • Industry Standard Metal-Ceramic Package
  • RoHS* Compliant
Applications
  • Aerospace and Defense
  • Avionics
  • Defense Communications
  • ISM
  • VHF/UHF/L-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 48 V
  • PSAT: 100 W
  • Gain: 17 dB
  • Test Freq: 2.1 GHz
  • Theta J-C: 1.7 C/W
  • Max Frequency: 2,200 MHz
Package
  • Flange Ceramic Pkg
Package Category
  • Ceramic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPT2010
Amplifier, 48V 100W DC-2.2GHz HEMT
AC360BP-F2 Inquire Buy Buy

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