Product Detail

NPT2022
GaN on Silicon General Purpose Amplifier, DC - 2 GHz, 48 V, 100 W

 The NPT2022 GaN on silicon HEMT D-Mode amplifier optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W in an industry standard plastic package with bolt down flange. The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. 

Features
  • GaN on Si HEMT D-Mode Amplifier
  • 20 dB Gain @ 900 MHz
  • 60 % Drain Efficiency @ 900 MHz
  • 100 % RF Tested
  • 48 V Operation
  • Tunable from DC - 2 GHz
  • Suitable for linear and saturated applications
  • RoHS* Compliant and 260°C reflow compatible
  • TO-272 Package
Applications
  • Aerospace and Defense
  • Avionics
  • Defense Communications
  • ISM
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 48 V
  • PSAT: 100 W
  • Gain: 20 dB
  • Test Freq: 0.9 GHz
  • Min Frequency: 0 MHz
  • Max Frequency: 2,000 MHz
  • Theta J-C: 1.3 C/W
Package
  • TO272
Package Category
  • Plastic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPT2022
Amplifier, GaN, 48V, 100W, DC-2.2GHz, HEMT
TO272-2
In Stock: 31
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In Stock: 59
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NPT2022-SMB1
Transistor, Sample Board, NPT2022
TO-272-2 Inquire
NPT2022-TR0250
Amplifier, T&R, GaN, 48V, 100W, DC-2.2GHz
TO-272-2 Inquire

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