Product Detail

Gallium Nitride 28V, 125W General Purpose RF Power Transistor
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  • Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz
  • 10W linear power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
  • Characterized for Operation up to 32V
  • 100% RF Tested
  • Thermally Enhanced Industry Standard Package
  • High Reliability Gold Metallization Process
  • Lead-Free
  • 125W P3dB Peak Envelope Power
  • 90W P3dB CW Power
  • Subject to ECCN 3A982.a.1 Export Control
  • RoHS Compliant
  • Supply Voltage: 28 V
  • PSAT: 90 W
  • Gain: 16 dB
  • Test Freq: 2.5 GHz
  • Theta J-C: 1.8 C/W
  • Flange Ceramic Pkg
Package Category
  • Ceramic
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Transistor, GaN, DC-2700MHz
AC780BM-P2 Inquire

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