GaN on Silicon Broadband Transistor, DC-6 GHz, 5W, 28V
The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A is a drop in replacement for the NPTB00004. For load-pull data and non-linear models, please send an e-mail to firstname.lastname@example.org.