NPTB00004A

GaN Amplifier 28 V, 5 W, DC - 6 GHz

The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A is a drop in replacement for the NPTB00004. For load-pull data and non-linear models, please send an e-mail to applications@macom.com.

Product Specifications

Part Number
NPTB00004A
Description
GaN Amplifier 28 V, 5 W, DC - 6 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Supply Voltage(V)
28
PSAT Watt(W)
5.0
Gain(dB)
17.0
Efficiency
>50
Test Freq(GHz)
2.50
Package
SOIC8NE
Package Category
Plastic
PSAT(dBm)
37

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NPTB00004A
Transistor,28V 5W DC-6GHz HEMT
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