Product Detail

NPTB00004A
GaN Power Transistor, 28 V, 5 W DC - 6 GHz
The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A is a drop in replacement for the NPTB00004. For load-pull data and non-linear models, please send an e-mail to applications@macom.com.
Features
  • 57 % Drain Efficiency @ 2.5 GHz
  • GaN on Si HEMT D-Mode Transistor
  • Tunable from DC - 6 GHz
  • Industry standard SOIC plastic package
  • 28V Operation
Applications
  • Aerospace and Defense
  • Defense Communications
  • ISM
  • VHF/UHF/L-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 28 V
  • PSAT: 5 W
  • Gain: 17 dB
  • Test Freq: 2.5 GHz
  • Min Frequency: 0 MHz
  • Max Frequency: 6,000 MHz
  • Theta J-C: 15 C/W
Package
  • SOIC8NE
Package Category
  • Plastic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPTB00004A
Transistor, 28V 5W DC-6GHz HEMT
SOIC8
In Stock: 14117
Buy
In Stock: 238
Buy
In Stock: 1313
Buy
NPTB00004A-TR0500
Transistor, 28V 5W DC-6GHz HEMT; 500pc
SOIC8 Inquire

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