Product Detail

GaN on Silicon Broadband Transistor, DC-4 GHz, 25W, 28V

The NPTB00025 GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package.

Features
  • Optimized for Broadband Operation from DC - 4000MHz
  • Thermally Enhanced Industry Standard Package
  • 100% RF Tested
  • Characterized for Operation up to 32V
  • 10W P3dB CW Broadband Power from 500-1000MHz
  • 25W P3dB CW Narrowband Power
  • Subject to EAR99 Export Control
  • High Reliability Gold Metallization Process
  • RoHS Compliant
Applications
  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 28 V
  • PSAT: 25 W
  • Gain: 13 dB
  • Test Freq: 3 GHz
  • Min Frequency: 0 MHz
  • Max Frequency: 4,000 MHz
  • Theta J-C: 5.3 C/W
Datasheet
Package
  • Flange Ceramic Pkg
Package Category
  • Ceramic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPTB00025B
Transistor, GaN, DC-4000MHz, 25W
AC200BM-F2
In Stock: 49
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