NPTB00025B

GaN Amplifier 28 V, 25 W, DC - 4 GHz

The NPTB00025 GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package.

Product Specifications

Part Number
NPTB00025B
Short Description
GaN Amplifier 28 V, 25 W, DC - 4 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
4000
Supply Voltage(V)
28
PSAT(W)
25.0
Gain(dB)
13.0
Efficiency
>50
Test Freq(GHz)
3.00
Package
Flange Ceramic Pkg
Package Category
Ceramic

Features

  • Optimized for Broadband Operation from DC - 4000MHz
  • Thermally Enhanced Industry Standard Package
  • 100% RF Tested
  • Characterized for Operation up to 32V
  • 10W P3dB CW Broadband Power from 500-1000MHz
  • 25W P3dB CW Narrowband Power
  • Subject to EAR99 Export Control
  • High Reliability Gold Metallization Process
  • RoHS Compliant

Applications

  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure

Technical Resources

Datasheet


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NPTB00025B
Transistor,GaN,DC-4000MHz, 25W
NPTB00025B Distributors