Training

MACOM's Shunt PIN diode series 

Listen to expert Paul Wade, Product Manager for Diode Standard Products, talk about MACOM's Shunt PIN diode series (MADP-011027, MADP-011028 & MADP-011029). These plastic packaged devices (1.5 X 1.2mm DFN) are ideally suited for switch applications operating from 50MHz to 12GHz with power handling up to and beyond 100W CW incident power.

Watch MWJ Editor Pat Hindle interview Preet Virk, Senior VP & GM of the Carrier Networks group at MACOM, as they discuss MACOM GaN and how it's achieving leadership efficiency, bandwidth and power gain with the linearity and cost structure like LDMOS, with path to better than LDMOS cost

MAGe-102425-300S00 300 W GaN-on-Silicon Power Transistor, designed for commercial scale solid-state RF Energy applications. 

MAAP-011250 4 W Ka-Band Power Amplifier, 27.5 - 30 GHz, designed for VSAT Communications. This device is designed for customers who need a balanced 4-stage, 4 W Ka-Band power amplifier providing 24 dB of linear gain.

High Power Limiter Modules: MADL-011012 / MADL-011014 / MADL-011015

Highest power handling limiters covering UHF, L and S-Band

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