Aluminium Gallium Arsenide (AlGaAs)

MACOM's Commitment to AlGaAs

“Leveraging MACOM’s expertise in GaAs technology, we have been able to develop complex, high performance technologies such as AlGaAs hetero-structures. Developed in our Lowell Massachusetts fab we are enabling further performance and product leadership in the space of PIN diodes and switches for multi-market applications, using this technology.”

Mike Ziehl
VP & GM, Multi-Market
Patented AlGaAs PIN Diodes Achieve RF Performance & Application Leadership

AlGaAs Technology

Bandgap Engineering has been used to produce novel semiconductor structures in the  microwave industry for over two decades. Utilizing the properties of multiple quantum wells, superlattices, and heterojunctions, a new class of semiconductors grown by molecular beam epitaxy and metalorganic vapor phase epitaxy has been created. These band gap principles have been applied to the development of MACOM’s AlGaAs technology resulting in a significant advancement in the RF performance of PIN diodes.

Key Advantages

  • Improvement in the return loss, insertion loss, and P-1dB as compared to an equivalent GaAs PIN structure.
  • A discrete heterojunction AlGaAs PIN diode, at a bias of 10 mA, demonstrates a factor of two reduction in high frequency insertion loss

Key Applications

  • Industrial, Scientific and Medical
  • Test and Measurement
  • Wireless Backhaul
  • Aerospace and Defense