Gallium Arsenide (GaAs)

MACOM's Commitment to Gallium Arsenide

Over the last 20 years GaAs FET/pHEMT technology has clearly demonstrated industry leading MMIC capabilities in RF, microwave, and mmW markets that are enabling high performance military and commercial applications. Building on decades of technology expertise MACOM has been and continues to be a leader in all of these fields.

RF & Microwave Portfolio

Gallium Arsenide (GaAs)

Gallium Arsenide Technology

Gallium arsenide (GaAs) contains electronic properties superior to those of silicon, such as higher saturated electron velocity and higher electron mobility, allowing GaAs transistors to function at frequencies over 250 GHz. Due to its wide band gap, GaAs is an ideal material for Monolithic Microwave Integrated Circuits (MMICs), where active and essential passive components can be readily produced on a single slice of GaAs.
For over three decades, MACOM has been the world leader in the advancement of GaAs producing state-of-the-art, high performance discrete devices; control components; mixed signal processing and converters; driver amplifiers; CATV amplifiers; LNAs; and power amplifiers as single purpose and multi-function MMICs. MACOM introduced the first pseudomorphic High Electron Mobility Transistors (pHEMT) supporting high volume components required for commercial applications. MACOM is currently advancing pHEMT design and development with the PH4 and PH6 power processes at the 0.5 mm and 0.25 mm gate nodes. These processes prove to be extremely versatile and continue to demonstrate leading edge performance in the production of multi-function MMICs for Aerospace & Defense and commercial applications. 

Key Advantages

  • Superior electronic properties over Silicon technology
  • Enables broadband performance over 250 GHz
  • Highly resistant due to wider band gap
    • Less noise dissipation
    • Resistant to radiation damage

Key Applications

  • Industrial, Scientific and Medical
  • Global Positioning System
  • CATV and Wired Broadband
  • Wireless Backhaul
  • Aerospace and Defense
  • Satellite Communication


Driver Amplifier

MAAM-011139 is a driver amplifier assembled in a lead-free 4 mm 24-lead PQFN plastic package that operates from 27.5 - 33.4 GHz.