GTRA262802FC

High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz

The GTRA262802FC is a 250-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRA262802FC
Description
High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz
Min Frequency (MHz)
2490
Max Frequency(MHz)
2690
P3dB Output Power(W)
250
Gain(dB)
14.0
Efficiency(%)
54
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical pulsed CW performance: 2605 MHz; 48 V; 16 μs pulse width; 10% duty cycle
  • Output power at P3dB 250 W
  • Efficiency 62%
  • Gain 14.4 dB
  • Capable of handling 10:1 VSWR @48 V; 38 W (CW) output power
  • Low thermal resistance
  • Input matched
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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GTRA262802FC-V2
250W 48V 2490-2690 MHz GaN SiC HEMT