GTRB424908FC

High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz

 The GTRB424908FC/1 is a 450-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. 

Product Specifications

Part Number
GTRB424908FC
Description
High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz
Min Frequency (MHz)
3700
Max Frequency(MHz)
3980
P3dB Output Power(W)
450
Gain(dB)
12.0
Efficiency(%)
42
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical Pulsed CW performance, 3800 MHz, 48 V, 100 μs, pulse width, 10% duty cycle, combined outputs
  • Output power at P3dB = 450 W
  • Efficiency at P3dB = 61%
  • Human Body Model Class 1C (per ANSI/ESDA/JEDECJS-001)
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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GTRB424908FC/1-V1
450W,48V,3700-3980MHz,GaN HEMT