GTVA262711FA

High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz

The GTVA262711FA is a 300-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTVA262711FA
Description
High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz
Min Frequency (MHz)
2620
Max Frequency(MHz)
2690
P3dB Output Power(W)
300
Gain(dB)
18.0
Efficiency(%)
39
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical Pulsed CW performance; 2690 MHz, 48 V, 10% duty cycle
  • Output power P3dB 300 W
  • Efficiency 62 %
  • Gain 19.1 dB
  • Capable of handling 10:1 VSWR @ 48 V, 70 W (CW) output power
  • Pb-free and RoHS compliant
  • Input matched

Technical Resources

Datasheet


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GTVA262711FA-V2
300W 48V 2620-2690 MHz GaN-SiC HEMT