Gallium Nitride (GaN)

High Power GaN Portfolio

RF Energy

MACOM is a member of the RF Energy Alliance.  Learn more about the RFEA here

MACOM is enabling RF Energy applications with exceptional efficiency & gain  Learn more 

GaN Technology for Wireless Basestations


Optimized to meet the most demanding bandwidth, performance, and efficiency needs, MACOM's semiconductor solutions for wireless infrastructure set new standards for integration, ease of use and cost effectiveness. Learn More

Debunking GaN Myths

Debunking-resize100x137.PNGThe semiconductor technology landscape for wireless infrastructure is undergoing a major transformation, particularly in the power amplifier (PA) market. The multi-decade dominance that laterally diffused metal oxide semiconductor (LDMOS) transistors have sustained in the PA domain is being challenged by Gallium Nitride (GaN), and the implications for wireless basestation performance and operating costs are profound.

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GaN Technology


MACOM has assumed a leadership role in driving the commercialization of GaN into mainstream applications. Offering the RF and microwave industry a broad  portfolio of  GaN on Si products spanning a wide range of package options for pulsed and continuous wave applications, we have firmly established ourselves as leaders across all GaN end market applications.


Regarding the maturation of GaN technology, we know today that GaN on Si delivers minimally 8X the raw power density of incumbent GaAs technology, while boosting efficiency from the mid 40% to up to 70%. We believe it can do this at minimally 2 to 3X lower cost than GaAs at maturity in 6” handset fabs.


GaN technology is now making the transition from specialized, government funded technology to high volume commercial mainstay. By leveraging the scale volume of the silicon industry, which is two orders of magnitude greater than even the GaAs handset market, we’ll soon be able to leverage GaN for cost-sensitive applications. At maturity, we believe that GaN on Si will benefit from silicon cost structures that are 3X lower than today’s highest volume GaAs and 100X lower cost than today’s GaN on SiC technology.

Transforming the Network

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