Gallium Nitride (GaN)

Interview with Dr Doug Carlson

Dr. Doug Carlson, Senior Vice President and General Manager, RF & Microwave on how MACOM and STMicroelectronics are bringing GaN on Silicon to Mainstream RF Markets and Applications

Latest News

MACOM and STMicroelectronics to Bring GaN on Silicon to Mainstream RF Markets and Applications 

GaN-on-Silicon Reliability and Qualification Report

A summary analysis of application-specific stress testing methodologies and results demonstrating the reliability of Gallium Nitride on Silicon (GaN-on-Si) RF power transistors for commercial wireless basestation infrastructure

Product Spotlight

The MAGx-101214-500L00 500 W GaN-on-Si RF power transistor is optimized for pulsed L-Band radar applications.

GaN Technology for Wireless Basestations

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MACOM's semiconductor solutions for wireless infrastructure set new standards for integration, ease of use and cost effectiveness. Learn More

Gallium Nitride (GaN)

GaN Technology

Introduction

MACOM is delivering the manufacturing scale, supply security, and surge capacity to assume a leadership role in driving the commercialization of GaN into mainstream applications. Offering the RF and microwave industry a broad portfolio of GaN on Si products spanning a wide range of package options for pulsed and continuous wave applications, we have firmly established ourselves as leaders across all GaN end market applications.

  • Regarding the maturation of GaN technology, we know today that GaN on Si delivers minimally 8X the raw power density of incumbent GaAs technology, while boosting efficiency from the mid 40% to up to 70%. We believe it can do this at minimally 2 to 3X lower cost than GaAs at maturity in 6” handset fabs.

  • Through our agreement with ST Microelectronics, MACOM expects to access increased Silicon wafer manufacturing capacity and improved cost structure that could displace incumbent Silicon LDMOS and accelerate the adoption of GaN on Silicon in mainstream markets

 

Featured Blog

The market landscape for RF semiconductor technology has experienced significant changes in recent years. For decades, laterally diffused metal oxide semiconductor (LDMOS) technology has dominated the RF semiconductor market in commercial volume applications. Today, the balance has shifted, and Gallium Nitride on Silicon (GaN-on-Si) technology has emerged as the technology of choice to succeed legacy LDMOS technology.  Read More

GaN Performance - Cost - Scalability

Featured Blog

RF Energy in Daily Life Part 4: GaN for Industrial Heating and Drying

Gallium Nitride (GaN) and RF (Radio Frequency) Energy applications are on the cusp of transforming the industrial market. We have examined how GaN has changed cookingplasma lighting and medical processes, and in part four of our RF Energy in Daily Life series, we are going to look at GaN for industrial heating and drying. Learn More

Transforming the Network

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RF Energy

MACOM is a member of the RF Energy Alliance.  Learn more about the RFEA here

MACOM is enabling RF Energy applications with exceptional efficiency & gain  Learn more 

Debunking GaN Myths

Debunking-resize100x137.PNGThe semiconductor technology landscape for wireless infrastructure is undergoing a major transformation, particularly in the power amplifier (PA) market...Download here

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