MACOM's MA4GP905 is a Gallium-Arsenide, beam-lead PIN diode. These
devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diode exhibits low series resistance, 3O, low capacitance, 25fF,and an extremely fast switching speed of 3nS. It is fully passivated with silicon nitride and has an additional polymer layer for scratch protection. This protective coating prevents damage to the junction and anode air bridge during handling and assembly.
The ultra low capacitance of the MA4GP905 device makes it ideally suited for use through W-band. The low RC product and low profile of the beamlead PIN diode allows for use in microwave, millimeter wave,
switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +20mA for the low loss state, and 0v, for the isolation state permits the use of a simple +5V TTL gate driver. GaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.