GaN and GaAs Device Bias Sequencer

Bias Sequencer

The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.

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MABC-001000-DP000L Buy GaN Bias Controller/Sequencer Module
50 14 -6.0
-3 -8.0 to 0V
50 mA
3.3
MABC-001000-DP000L.pdf
Robust GaN Protection at Any Power Up/Power Down Sequence
RoHS* Compliant and 260°C Reflow Compatible
Gate Bias Output Current = 50 mA for Heavy RF Compression
Target = 500 ns Total Switch Transition Time
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT Leads
30 dB Typical EMI/RFI Rejection at All I/O Ports
Internal Thermistor or External Temperature Sensor Voltage for Gate Bias Sum
Open Drain Output Current of = 200 mA for External MOSFET Switch Drive
Fixed Gate Bias Voltage with Pulsed Drain Bias Voltage. Add-On Module Allows for Gate Pulsing
Yes
100 / 70
SMT
Surfact Mount
22.5 x 6.5 x 5.0
50 Package Image - MABC-001000-DP00L.PNG
GaN Bias Controller/Sequencer Module
MABC-001000-DPS00L Buy GaN Bias Controller/Sequencer Module
50 14 -6
-3 -8 to 0
50
3.3
MABC-001000-DPS00L.pdf
Robust GaN Protection at Any Power Up/Power Down Sequence
Gate Bias Output Current = 50 mA for Heavy RF Compression
Low Power Dissipation < 100 mW
Target = 500 ns Total Switch Transition Time
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT Leads
30 dB Typical EMI/RFI Rejection at All I/O Ports
Open Drain Output Current of = 200 mA for External MOSFET Switch Drive
Fixed Gate with Pulsed Drain Bias Voltage. Add-On Module Allows for Gate Pulsing
RoHS* Compliant and 260°C Reflow Compatible
Yes
6.60 x 22.48 mm2
SMT
MABC-001000-DPS00L.PNG
Module