CG2H80015D-GP4

15 W; 8.0 GHz ; GaN HEMT Die

The CG2H80015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Product Specifications

Part Number
CG2H80015D-GP4
Description
15 W; 8.0 GHz ; GaN HEMT Die
Min Frequency(MHz)
0
Max Frequency(MHz)
8000
Peak Output Power(W)
15
Efficiency(%)
70
Operating Voltage(V)
28
Form
Discrete Bare Die
Package Category
Die
Technology
GaN-on-SiC

Features

  • 28 V Operation
  • 15 W Typical PSAT
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 8 GHz Operation
  • High Efficiency

Order from MACOM

CG2H80015D-GP4
DIE, GAN HEMT, 15W, 8.0GHz, G28V4, 51064
CG2H80015D-GP4 Distributors