CGH35240

240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems

The CGH35240 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35240 ideal for 3.1 - 3.5-GHz; S-band; radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Product Specifications

Part Number
CGH35240
Description
240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems
Min Frequency(MHz)
3100
Max Frequency(MHz)
3500
Peak Output Power(W)
240
Gain(dB)
11.6
Efficiency(%)
57
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange
Technology
GaN-on-SiC

Features

  • 3.1 – 3.5 GHz Operation
  • 240 W Typical Output Power
  • 11.6 dB Power Gain at PIN = 42.0 dBm
  • 57% Typical Power Added Efficiency
  • 50 Ohm Internally Matched
  • <0.2 dB Pulsed Amplitude Droop

Technical Resources

Datasheet

Model Data (Sparameters)


Order from MACOM

CGH35240F
240W, 3.5GHz, 830173F, GaN HEMT, 28V, FL
CGH35240F Distributors
CGH35240F-AMP
AMPLIFIER, 3.1-3.5GHz, INCLUDE CGH35240F